Nitrogen contribution to N-doped GeTe (N: 8.4 at.%) in the structural phase transition
Chemical states of N-doped GeTe (N: 8.4 at.%) thin film (NGT) in structural phase transition were investigated by near-edge x-ray absorption of fine structure and high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. We found the NaCl-like structure in NGT by x-ray diffraction...
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Veröffentlicht in: | Current applied physics 2011, 11(3), , pp.710-713 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Chemical states of N-doped GeTe (N: 8.4 at.%) thin film (NGT) in structural phase transition were investigated by near-edge x-ray absorption of fine structure and high-resolution x-ray photoelectron spectroscopy with synchrotron radiation. We found the NaCl-like structure in NGT by x-ray diffraction at around 300 °C. Preparatory to the analysis of chemical states, after mild Ne
+ sputtering we obtained clean amorphous NGT, which showed the N
2 vibration mode peak in the N
K-edge absorption spectrum. After annealing, the N
2 molecular peak disappeared completely and we assumed that nitrogen was contributed only to the Ge atom in structural phase transition by analyzing Ge 3
d and Te 4
d core-levels.
► We performed NEXAFS and HRXPS experiments on N-doped GeTe (N: 8.4 at.%). ► We found the N
2 molecular vibration mode peak in the absorption spectra of the amorphous phase. ► The vibration mode peak completely disappeared after annealing. ► We confirmed the chemical states of Te–GeN
x
(
x > 1), N–Ge and N–Ge–Te. ► The nitrogen contribution to the N-doped GeTe system, in the structural transition, was incorporated only with Ge. |
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ISSN: | 1567-1739 1878-1675 |
DOI: | 10.1016/j.cap.2010.11.036 |