Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence

Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at t...

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Veröffentlicht in:IEEE transactions on nuclear science 2016-10, Vol.64 (1)
Hauptverfasser: Javanainen, Arto, Galloway, Kenneth F., Nicklaw, Christopher, Bosser, Alexandre L., Ferlet-Cavrois, Veronique, Lauenstein, Jean-Marie, Pintacuda, Francesco, Reed, Robert A., Schrimpf, Ronald D., Weller, Robert A., Virtanen, Ari Juha
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container_title IEEE transactions on nuclear science
container_volume 64
creator Javanainen, Arto
Galloway, Kenneth F.
Nicklaw, Christopher
Bosser, Alexandre L.
Ferlet-Cavrois, Veronique
Lauenstein, Jean-Marie
Pintacuda, Francesco
Reed, Robert A.
Schrimpf, Ronald D.
Weller, Robert A.
Virtanen, Ari Juha
description Experimental results on ion-induced leakage current increase in 4H-SiC Schottky power diodes are presented. Monte Carlo and TCAD simulations show that degradation is due to the synergy between applied bias and ion energy deposition. This degradation is possibly related to thermal spot annealing at the metal semiconductor interface. This thermal annealing leads to an inhomogeneity of the Schottky barrier that could be responsible for the increase leakage current as a function of fluence.
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title Heavy Ion Induced Degradation in SiC Schottky Diodes: Bias and Energy Deposition Dependence
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