High Performance High Temperature Thermoelectric Composites with Metallic Inclusions
The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectr...
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creator | Ma, James M. Bux, Sabah K. Fleurial, Jean-Pierre Ravi, Vilupanur A. Firdosy, Samad A. Star, Kurt Kaner, Richard B. |
description | The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material. |
format | Report |
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The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.</description><language>eng</language><publisher>Headquarters</publisher><subject>Composite Materials ; Metals And Metallic Materials</subject><creationdate>2017</creationdate><rights>Copyright Determination: GOV_PUBLIC_USE_PERMITTED</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>780,800,4490</link.rule.ids><linktorsrc>$$Uhttps://ntrs.nasa.gov/citations/20170004920$$EView_record_in_NASA$$FView_record_in_$$GNASA$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Ma, James M.</creatorcontrib><creatorcontrib>Bux, Sabah K.</creatorcontrib><creatorcontrib>Fleurial, Jean-Pierre</creatorcontrib><creatorcontrib>Ravi, Vilupanur A.</creatorcontrib><creatorcontrib>Firdosy, Samad A.</creatorcontrib><creatorcontrib>Star, Kurt</creatorcontrib><creatorcontrib>Kaner, Richard B.</creatorcontrib><title>High Performance High Temperature Thermoelectric Composites with Metallic Inclusions</title><description>The present invention provides a composite thermoelectric material. The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. 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The composite thermoelectric material can include a semiconductor material comprising a rare earth metal. The atomic percent of the rare earth metal in the semiconductor material can be at least about 20%. The composite thermoelectric material can further include a metal forming metallic inclusions distributed throughout the semiconductor material. The present invention also provides a method of forming this composite thermoelectric material.</abstract><cop>Headquarters</cop><oa>free_for_read</oa></addata></record> |
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subjects | Composite Materials Metals And Metallic Materials |
title | High Performance High Temperature Thermoelectric Composites with Metallic Inclusions |
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