Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, wh...

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Bibliographische Detailangaben

Hauptverfasser:	Kolokolov, K. I., Ning, C. Z.
Format:	Report
Sprache:	eng
Schlagworte:	Electronics And Electrical Engineering
Online-Zugang:	Volltext bestellen
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