The effects of electron and proton radiation on GaSb infrared solar cells
Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade sli...
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| creator | Gruenbaum, P. E. Avery, J. E. Fraas, L. M. |
| description | Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C). |
| format | Conference Proceeding |
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M.</creatorcontrib><description>Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).</description><language>eng</language><publisher>Legacy CDMS</publisher><subject>Energy Production And Conversion</subject><creationdate>1991</creationdate><rights>Copyright Determination: GOV_PUBLIC_USE_PERMITTED</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,776,796</link.rule.ids><linktorsrc>$$Uhttps://ntrs.nasa.gov/citations/19910020930$$EView_record_in_NASA$$FView_record_in_$$GNASA$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Gruenbaum, P. E.</creatorcontrib><creatorcontrib>Avery, J. E.</creatorcontrib><creatorcontrib>Fraas, L. M.</creatorcontrib><title>The effects of electron and proton radiation on GaSb infrared solar cells</title><description>Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. 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M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-nasa_ntrs_199100209303</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1991</creationdate><topic>Energy Production And Conversion</topic><toplevel>online_resources</toplevel><creatorcontrib>Gruenbaum, P. E.</creatorcontrib><creatorcontrib>Avery, J. E.</creatorcontrib><creatorcontrib>Fraas, L. M.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gruenbaum, P. E.</au><au>Avery, J. E.</au><au>Fraas, L. M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>The effects of electron and proton radiation on GaSb infrared solar cells</atitle><date>1991-08-01</date><risdate>1991</risdate><abstract>Gallium antimonide (GaSb) infrared solar cells were exposed to 1 MeV electrons and protons up to fluences of 1 times 10(exp 15) cm (-2) and 1 times 10(exp 12) cm (-2) respectively. In between exposures, current voltage and spectral response curves were taken. The GaSb cells were found to degrade slightly less than typical GaAs cells under electron irradiation, and calculations from spectral response curves showed that the damage coefficient for the minority carrier diffusion length was 3.5 times 10(exp 8). The cells degraded faster than GaAs cells under proton irradiation. However, researchers expect the top cell and coverglass to protect the GaSb cell from most damaging protons. Some annealing of proton damage was observed at low temperatures (80 to 160 C).</abstract><cop>Legacy CDMS</cop><oa>free_for_read</oa></addata></record> |
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| subjects | Energy Production And Conversion |
| title | The effects of electron and proton radiation on GaSb infrared solar cells |
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