Isotopic study of oxygen diffusion in oxide coatings
Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Gulino, Daniel A. Kren, Lawrence A. Dever, Therese M. |
description | Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a direct current magnetron using reactive sputtering techniques. To produce (O-18)- enriched SiO2, a standard 3.5-in.-diameter silicon wafer was reactively sputtered using (O-18)-enriched (95 percent) oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering and Secondary Ion Mass Spectrometer (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 hr. The concentration ratio of O-16 as a function of depth was determined using SIMS profiling and compared to a baseline, nonplasma exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10(-15)sq cm/sec. |
format | Conference Proceeding |
fullrecord | <record><control><sourceid>nasa_CYI</sourceid><recordid>TN_cdi_nasa_ntrs_19890015080</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19890015080</sourcerecordid><originalsourceid>FETCH-nasa_ntrs_198900150803</originalsourceid><addsrcrecordid>eNrjZDDxLM4vyS_ITFYoLilNqVTIT1PIr6hMT81TSMlMSystzszPU8jMA4plpqQqJOcnlmTmpRfzMLCmJeYUp_JCaW4GGTfXEGcP3bzE4sT4vJKi4nhDSwtLAwNDUwMLA2MC0gBvUyj8</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Isotopic study of oxygen diffusion in oxide coatings</title><source>NASA Technical Reports Server</source><creator>Gulino, Daniel A. ; Kren, Lawrence A. ; Dever, Therese M.</creator><creatorcontrib>Gulino, Daniel A. ; Kren, Lawrence A. ; Dever, Therese M.</creatorcontrib><description>Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a direct current magnetron using reactive sputtering techniques. To produce (O-18)- enriched SiO2, a standard 3.5-in.-diameter silicon wafer was reactively sputtered using (O-18)-enriched (95 percent) oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering and Secondary Ion Mass Spectrometer (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 hr. The concentration ratio of O-16 as a function of depth was determined using SIMS profiling and compared to a baseline, nonplasma exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10(-15)sq cm/sec.</description><language>eng</language><publisher>Legacy CDMS</publisher><subject>Chemistry And Materials (General)</subject><creationdate>1989</creationdate><rights>Copyright Determination: GOV_PUBLIC_USE_PERMITTED</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,776,796</link.rule.ids><linktorsrc>$$Uhttps://ntrs.nasa.gov/citations/19890015080$$EView_record_in_NASA$$FView_record_in_$$GNASA$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Gulino, Daniel A.</creatorcontrib><creatorcontrib>Kren, Lawrence A.</creatorcontrib><creatorcontrib>Dever, Therese M.</creatorcontrib><title>Isotopic study of oxygen diffusion in oxide coatings</title><description>Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a direct current magnetron using reactive sputtering techniques. To produce (O-18)- enriched SiO2, a standard 3.5-in.-diameter silicon wafer was reactively sputtered using (O-18)-enriched (95 percent) oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering and Secondary Ion Mass Spectrometer (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 hr. The concentration ratio of O-16 as a function of depth was determined using SIMS profiling and compared to a baseline, nonplasma exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10(-15)sq cm/sec.</description><subject>Chemistry And Materials (General)</subject><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>1989</creationdate><recordtype>conference_proceeding</recordtype><sourceid>CYI</sourceid><recordid>eNrjZDDxLM4vyS_ITFYoLilNqVTIT1PIr6hMT81TSMlMSystzszPU8jMA4plpqQqJOcnlmTmpRfzMLCmJeYUp_JCaW4GGTfXEGcP3bzE4sT4vJKi4nhDSwtLAwNDUwMLA2MC0gBvUyj8</recordid><startdate>19890101</startdate><enddate>19890101</enddate><creator>Gulino, Daniel A.</creator><creator>Kren, Lawrence A.</creator><creator>Dever, Therese M.</creator><scope>CYE</scope><scope>CYI</scope></search><sort><creationdate>19890101</creationdate><title>Isotopic study of oxygen diffusion in oxide coatings</title><author>Gulino, Daniel A. ; Kren, Lawrence A. ; Dever, Therese M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-nasa_ntrs_198900150803</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>1989</creationdate><topic>Chemistry And Materials (General)</topic><toplevel>online_resources</toplevel><creatorcontrib>Gulino, Daniel A.</creatorcontrib><creatorcontrib>Kren, Lawrence A.</creatorcontrib><creatorcontrib>Dever, Therese M.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Gulino, Daniel A.</au><au>Kren, Lawrence A.</au><au>Dever, Therese M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Isotopic study of oxygen diffusion in oxide coatings</atitle><date>1989-01-01</date><risdate>1989</risdate><abstract>Diffusion of oxygen in thin films of silicon dioxide was studied using oxygen isotopically enriched in oxygen of atomic mass 18 (O-18). This subject is of interest because thin films of dielectrics such as SiO2 are proposed for use as a protective coatings for solar mirrors in low Earth orbit, which is a strongly oxidizing environment. Films of this material were prepared with a direct current magnetron using reactive sputtering techniques. To produce (O-18)- enriched SiO2, a standard 3.5-in.-diameter silicon wafer was reactively sputtered using (O-18)-enriched (95 percent) oxygen as the plasma feed gas. The films were characterized using Rutherford backscattering and Secondary Ion Mass Spectrometer (SIMS) to establish stoichiometry and purity. Subsequently, the films were exposed to an air-derived oxygen plasma in a standard laboratory plasma reactor for durations of up to 10 hr. The concentration ratio of O-16 as a function of depth was determined using SIMS profiling and compared to a baseline, nonplasma exposed sample. A value for the diffusivity of oxygen near the surface of these films was obtained and found to be about 10(-15)sq cm/sec.</abstract><cop>Legacy CDMS</cop><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_nasa_ntrs_19890015080 |
source | NASA Technical Reports Server |
subjects | Chemistry And Materials (General) |
title | Isotopic study of oxygen diffusion in oxide coatings |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T15%3A17%3A42IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-nasa_CYI&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Isotopic%20study%20of%20oxygen%20diffusion%20in%20oxide%20coatings&rft.au=Gulino,%20Daniel%20A.&rft.date=1989-01-01&rft_id=info:doi/&rft_dat=%3Cnasa_CYI%3E19890015080%3C/nasa_CYI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |