Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	Groves, W. O.
Format:	Report
Sprache:	eng
Schlagworte:	Solid-State Physics
Online-Zugang:	Volltext bestellen
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