High voltage, high current Schottky barrier solar cell
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Report |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Stirn, R. J. |
| description | A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film. |
| format | Report |
| fullrecord | <record><control><sourceid>nasa_CYI</sourceid><recordid>TN_cdi_nasa_ntrs_19780005583</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>19780005583</sourcerecordid><originalsourceid>FETCH-nasa_ntrs_197800055833</originalsourceid><addsrcrecordid>eNrjZDDzyEzPUCjLzylJTE_VUcgA8ZJLi4pS80oUgpMz8ktKsisVkhKLijJTixSK83MSixSSU3NyeBhY0xJzilN5oTQ3g4yba4izh25eYnFifF5JUXG8oaW5hYGBgamphbExAWkAmP0pSQ</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>report</recordtype></control><display><type>report</type><title>High voltage, high current Schottky barrier solar cell</title><source>NASA Technical Reports Server</source><creator>Stirn, R. J.</creator><creatorcontrib>Stirn, R. J.</creatorcontrib><description>A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.</description><language>eng</language><publisher>Legacy CDMS</publisher><subject>Energy Production And Conversion</subject><creationdate>1977</creationdate><rights>Copyright Determination: GOV_PUBLIC_USE_PERMITTED</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>780,800,4490</link.rule.ids><linktorsrc>$$Uhttps://ntrs.nasa.gov/citations/19780005583$$EView_record_in_NASA$$FView_record_in_$$GNASA$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Stirn, R. J.</creatorcontrib><title>High voltage, high current Schottky barrier solar cell</title><description>A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.</description><subject>Energy Production And Conversion</subject><fulltext>true</fulltext><rsrctype>report</rsrctype><creationdate>1977</creationdate><recordtype>report</recordtype><sourceid>CYI</sourceid><recordid>eNrjZDDzyEzPUCjLzylJTE_VUcgA8ZJLi4pS80oUgpMz8ktKsisVkhKLijJTixSK83MSixSSU3NyeBhY0xJzilN5oTQ3g4yba4izh25eYnFifF5JUXG8oaW5hYGBgamphbExAWkAmP0pSQ</recordid><startdate>19771011</startdate><enddate>19771011</enddate><creator>Stirn, R. J.</creator><scope>CYE</scope><scope>CYI</scope></search><sort><creationdate>19771011</creationdate><title>High voltage, high current Schottky barrier solar cell</title><author>Stirn, R. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-nasa_ntrs_197800055833</frbrgroupid><rsrctype>reports</rsrctype><prefilter>reports</prefilter><language>eng</language><creationdate>1977</creationdate><topic>Energy Production And Conversion</topic><toplevel>online_resources</toplevel><creatorcontrib>Stirn, R. J.</creatorcontrib><collection>NASA Scientific and Technical Information</collection><collection>NASA Technical Reports Server</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Stirn, R. J.</au><format>book</format><genre>unknown</genre><ristype>RPRT</ristype><btitle>High voltage, high current Schottky barrier solar cell</btitle><date>1977-10-11</date><risdate>1977</risdate><abstract>A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.</abstract><cop>Legacy CDMS</cop><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_nasa_ntrs_19780005583 |
| source | NASA Technical Reports Server |
| subjects | Energy Production And Conversion |
| title | High voltage, high current Schottky barrier solar cell |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T02%3A26%3A13IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-nasa_CYI&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=unknown&rft.btitle=High%20voltage,%20high%20current%20Schottky%20barrier%20solar%20cell&rft.au=Stirn,%20R.%20J.&rft.date=1977-10-11&rft_id=info:doi/&rft_dat=%3Cnasa_CYI%3E19780005583%3C/nasa_CYI%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |