Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry
The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of E...
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creator | Dorney, Kevin M Kissoon, Nicola N Holzmeier, Fabian Larsen, Esben W Singh, Dhirendra P Arvind, Shikhar Santra, Sayantani Fallica, Roberto Makhotkin, Igor Philipsen, Vicky Gendt, Stefan De Fleischmann, Claudia Heide, Paul A.W. van der Petersen, John S |
description | The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec's AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation. |
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fullrecord | <record><control><sourceid>kuleuven_FZOIL</sourceid><recordid>TN_cdi_kuleuven_dspace_20_500_12942_758335</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>20_500_12942_758335</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_20_500_12942_7583353</originalsourceid><addsrcrecordid>eNqVjTEOwjAMRbswIOAOnpGKSkMFjAgVcQBgjdzUpRFpEiVpgdsTBAeAyfbzf_rjZNiJILUUILW3FHejwTQQWoLyfAFjgxSowKLDjgI5__4qGVpzdWjbKHYYsUTl4R4xKKzSCj3V4LCWJkruCajjSY2KBR8yTUZNVGj2nZNkfihP-2N66xX1A2lee4uCeJ7xIsv4Mt-ucr4uNowV7M_w4ucwD4_AXjGaWdA</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry</title><source>Lirias (KU Leuven Association)</source><creator>Dorney, Kevin M ; Kissoon, Nicola N ; Holzmeier, Fabian ; Larsen, Esben W ; Singh, Dhirendra P ; Arvind, Shikhar ; Santra, Sayantani ; Fallica, Roberto ; Makhotkin, Igor ; Philipsen, Vicky ; Gendt, Stefan De ; Fleischmann, Claudia ; Heide, Paul A.W. van der ; Petersen, John S</creator><contributor>Lio, Anna</contributor><creatorcontrib>Dorney, Kevin M ; Kissoon, Nicola N ; Holzmeier, Fabian ; Larsen, Esben W ; Singh, Dhirendra P ; Arvind, Shikhar ; Santra, Sayantani ; Fallica, Roberto ; Makhotkin, Igor ; Philipsen, Vicky ; Gendt, Stefan De ; Fleischmann, Claudia ; Heide, Paul A.W. van der ; Petersen, John S ; Lio, Anna</creatorcontrib><description>The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec's AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation.</description><language>eng</language><publisher>SPIE</publisher><ispartof>Optical and EUV Nanolithography XXXVI, 2023, Vol.12494, p.1249407-1249407</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,315,776,4036,4037,27837</link.rule.ids><linktorsrc>$$Uhttps://lirias.kuleuven.be/handle/20.500.12942/758335$$EView_record_in_KU_Leuven_Association$$FView_record_in_$$GKU_Leuven_Association</linktorsrc></links><search><contributor>Lio, Anna</contributor><creatorcontrib>Dorney, Kevin M</creatorcontrib><creatorcontrib>Kissoon, Nicola N</creatorcontrib><creatorcontrib>Holzmeier, Fabian</creatorcontrib><creatorcontrib>Larsen, Esben W</creatorcontrib><creatorcontrib>Singh, Dhirendra P</creatorcontrib><creatorcontrib>Arvind, Shikhar</creatorcontrib><creatorcontrib>Santra, Sayantani</creatorcontrib><creatorcontrib>Fallica, Roberto</creatorcontrib><creatorcontrib>Makhotkin, Igor</creatorcontrib><creatorcontrib>Philipsen, Vicky</creatorcontrib><creatorcontrib>Gendt, Stefan De</creatorcontrib><creatorcontrib>Fleischmann, Claudia</creatorcontrib><creatorcontrib>Heide, Paul A.W. van der</creatorcontrib><creatorcontrib>Petersen, John S</creatorcontrib><title>Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry</title><title>Optical and EUV Nanolithography XXXVI</title><description>The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec's AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation.</description><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2023</creationdate><recordtype>conference_proceeding</recordtype><sourceid>FZOIL</sourceid><recordid>eNqVjTEOwjAMRbswIOAOnpGKSkMFjAgVcQBgjdzUpRFpEiVpgdsTBAeAyfbzf_rjZNiJILUUILW3FHejwTQQWoLyfAFjgxSowKLDjgI5__4qGVpzdWjbKHYYsUTl4R4xKKzSCj3V4LCWJkruCajjSY2KBR8yTUZNVGj2nZNkfihP-2N66xX1A2lee4uCeJ7xIsv4Mt-ucr4uNowV7M_w4ucwD4_AXjGaWdA</recordid><startdate>2023</startdate><enddate>2023</enddate><creator>Dorney, Kevin M</creator><creator>Kissoon, Nicola N</creator><creator>Holzmeier, Fabian</creator><creator>Larsen, Esben W</creator><creator>Singh, Dhirendra P</creator><creator>Arvind, Shikhar</creator><creator>Santra, Sayantani</creator><creator>Fallica, Roberto</creator><creator>Makhotkin, Igor</creator><creator>Philipsen, Vicky</creator><creator>Gendt, Stefan De</creator><creator>Fleischmann, Claudia</creator><creator>Heide, Paul A.W. van der</creator><creator>Petersen, John S</creator><general>SPIE</general><scope>FZOIL</scope></search><sort><creationdate>2023</creationdate><title>Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry</title><author>Dorney, Kevin M ; Kissoon, Nicola N ; Holzmeier, Fabian ; Larsen, Esben W ; Singh, Dhirendra P ; Arvind, Shikhar ; Santra, Sayantani ; Fallica, Roberto ; Makhotkin, Igor ; Philipsen, Vicky ; Gendt, Stefan De ; Fleischmann, Claudia ; Heide, Paul A.W. van der ; Petersen, John S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_20_500_12942_7583353</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Dorney, Kevin M</creatorcontrib><creatorcontrib>Kissoon, Nicola N</creatorcontrib><creatorcontrib>Holzmeier, Fabian</creatorcontrib><creatorcontrib>Larsen, Esben W</creatorcontrib><creatorcontrib>Singh, Dhirendra P</creatorcontrib><creatorcontrib>Arvind, Shikhar</creatorcontrib><creatorcontrib>Santra, Sayantani</creatorcontrib><creatorcontrib>Fallica, Roberto</creatorcontrib><creatorcontrib>Makhotkin, Igor</creatorcontrib><creatorcontrib>Philipsen, Vicky</creatorcontrib><creatorcontrib>Gendt, Stefan De</creatorcontrib><creatorcontrib>Fleischmann, Claudia</creatorcontrib><creatorcontrib>Heide, Paul A.W. van der</creatorcontrib><creatorcontrib>Petersen, John S</creatorcontrib><collection>Lirias (KU Leuven Association)</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dorney, Kevin M</au><au>Kissoon, Nicola N</au><au>Holzmeier, Fabian</au><au>Larsen, Esben W</au><au>Singh, Dhirendra P</au><au>Arvind, Shikhar</au><au>Santra, Sayantani</au><au>Fallica, Roberto</au><au>Makhotkin, Igor</au><au>Philipsen, Vicky</au><au>Gendt, Stefan De</au><au>Fleischmann, Claudia</au><au>Heide, Paul A.W. van der</au><au>Petersen, John S</au><au>Lio, Anna</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry</atitle><btitle>Optical and EUV Nanolithography XXXVI</btitle><date>2023</date><risdate>2023</risdate><volume>12494</volume><spage>1249407</spage><epage>1249407</epage><pages>1249407-1249407</pages><abstract>The interaction of EUV light with matter is a critical step in EUV lithographic processes and optimization of the optical material parameters of photoresists and reflector/absorber stacks is crucial to harness the full power of EUV lithography. To optimize these materials, accurate measurements of EUV absorption and reflection are needed to extract the corresponding actinic optical properties and structural parameters. Here, we report on two endstations within imec's AttoLab that enable actinic EUV absorption and reflection measurements. We commission these tools with measurements on model thin film and photoresist systems and provide extracted optical parameters as well as absorption kinetics, respectively. These results showcase the power of these tools for providing crucial data for material optimization and lithographic simulation.</abstract><pub>SPIE</pub></addata></record> |
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title | Actinic inspection of the EUV optical parameters of lithographic materials with lab-based radiometry and reflectometry |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-15T13%3A48%3A32IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven_FZOIL&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Actinic%20inspection%20of%20the%20EUV%20optical%20parameters%20of%20lithographic%20materials%20with%20lab-based%20radiometry%20and%20reflectometry&rft.btitle=Optical%20and%20EUV%20Nanolithography%20XXXVI&rft.au=Dorney,%20Kevin%20M&rft.date=2023&rft.volume=12494&rft.spage=1249407&rft.epage=1249407&rft.pages=1249407-1249407&rft_id=info:doi/&rft_dat=%3Ckuleuven_FZOIL%3E20_500_12942_758335%3C/kuleuven_FZOIL%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |