Two-dimensional WS2 nanoribbon deposition by conversion of pre-patterned amorphous silicon
We present a method for area selective deposition of 2D WS2 nanoribbons with tunable thickness on a dielectric substrate. The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF6, followed by in situ sulfidation by H2S. The reaction process, perfor...
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| Veröffentlicht in: | Nanotechnology 2017, Vol.28 (4) |
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| container_title | Nanotechnology |
| container_volume | 28 |
| creator | Heyne, Markus de Marneffe, Jean-Francois Delabie, Annelies Caymax, Matty Neyts, Erik C Radu, Iuliana Huyghebaert, Cedric De Gendt, Stefan |
| description | We present a method for area selective deposition of 2D WS2 nanoribbons with tunable thickness on a dielectric substrate. The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF6, followed by in situ sulfidation by H2S. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. Upon rapid thermal annealing at 900 °C under inert gas, the WS2 basal planes align parallel to the substrate. |
| format | Article |
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The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF6, followed by in situ sulfidation by H2S. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. 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The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF6, followed by in situ sulfidation by H2S. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. Upon rapid thermal annealing at 900 °C under inert gas, the WS2 basal planes align parallel to the substrate.</abstract><pub>IOP Pub</pub></addata></record> |
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| title | Two-dimensional WS2 nanoribbon deposition by conversion of pre-patterned amorphous silicon |
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