Enhanced electrical activation in In-implanted Ge by C co-doping

© 2015 AIP Publishing LLC. At high dopant concentrations in Ge, electrically activating all implanted dopants is a major obstacle in the fulfillment of high-performance Ge-channel complementary metal oxide semiconductor devices. In this letter, we demonstrate a significant increase in the electrical...

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Veröffentlicht in:	Applied Physics Letters 2015-11, Vol.107 (21), p.1-6
Hauptverfasser:	Feng, R, Kremer, F, Sprouster, D.J, Mirzaei, Sayeh, Decoster, Stijn, Glover, C.J, Medling, S.A, Pereira, Lino, Russo, S.P, Ridgway, M.C
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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