Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn
In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter was extracted for GeSn: bGeSn = 0.041 Å (in ex...
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| Veröffentlicht in: | ECS Journal of Solid State Science and Technology 2013, Vol.2 (4), p.P134-P137 |
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| creator | Gencarelli, Federica Vincent, B Demeulemeester, Jelle Vantomme, André Moussa, A Franquet, A Arul, Arul Bender, H Meersschaut, J Vandervorst, Wilfried Loo, R Caymax, M Temst, Kristiaan Heyns, Marc |
| description | In this contribution, we discuss the crystalline properties of strained and strain-relaxed CVD-grown GeSn layers with Sn content in the range 6.4-12.6 at.%. A positive deviation from Vegard's law was observed and a new experimental bowing parameter was extracted for GeSn: bGeSn = 0.041 Å (in excellent agreement with recent theoretical predictions). The GeSn critical thickness for strain relaxation as a function of Sn concentration was determined, resulting in significantly higher values than those predicted by equilibrium models. A composition-dependent strain relaxation mechanism was also found, with the formation of an increasing density of GeSn pyramidal islands in addition to misfit dislocations at lower Sn concentration. © 2013 The Electrochemical Society. |
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| title | Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn |
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