Leveling of microvias by electroplating for wafer-level-packaging

Leveling of microvias by electroplating for wafer-level-packaging

The filling of microvias with diameters between 30 and 100 μm and aspect ratios up to 2.5 in silicon wafers, was investigated to determine the performance of copper electroplating. An electrolyte with a low leveler concentration was only suitable for filling microvias with aspect ratios below 1. An...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:ECS Transactions, Electrochemical Society Transactions Electrochemical Society Transactions, 2007, Vol.6 (8), p.123-133
Hauptverfasser: Lühn, Ole, Celis, Jean-Pierre, Van Hoof, Christiaan, Baert, K, Ruythooren, W
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 133
container_issue 8
container_start_page 123
container_title ECS Transactions, Electrochemical Society Transactions
container_volume 6
creator Lühn, Ole
Celis, Jean-Pierre
Van Hoof, Christiaan
Baert, K
Ruythooren, W
description The filling of microvias with diameters between 30 and 100 μm and aspect ratios up to 2.5 in silicon wafers, was investigated to determine the performance of copper electroplating. An electrolyte with a low leveler concentration was only suitable for filling microvias with aspect ratios below 1. An increase of the leveler concentration enabled the filling of microvias with higher aspect ratios. The fill-up evolution shows a bottom-up plating behavior. Electrochemical measurements show that for conditions prevailing at the bottom of the via, the electrodeposition rate is enhanced while for conditions prevailing at the top, it is inhibited. This difference originates from a concentration gradient of leveler inside the via and different convection conditions inside and outside the via.
format Article
fullrecord <record><control><sourceid>kuleuven</sourceid><recordid>TN_cdi_kuleuven_dspace_123456789_199285</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>123456789_199285</sourcerecordid><originalsourceid>FETCH-kuleuven_dspace_123456789_1992853</originalsourceid><addsrcrecordid>eNpjYeA0tDS20DW1MDPiYOAqLs4yMDAzNDQx52Rw9EktS83JzEtXyE9TyM1MLsovy0wsVkiqVEjNSU0uKcovyEksAUmn5RcplCempRbp5oB06BYkJmcnpgNleBhY0xJzilN5oTQ3g7qba4izh252aU5qaVlqXnxKMVBxaryhkbGJqZm5hWW8oaWlkYWpMSkqtYlTGV9SUWIMAJliR_g</addsrcrecordid><sourcetype>Institutional Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Leveling of microvias by electroplating for wafer-level-packaging</title><source>Lirias (KU Leuven Association)</source><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Lühn, Ole ; Celis, Jean-Pierre ; Van Hoof, Christiaan ; Baert, K ; Ruythooren, W</creator><creatorcontrib>Lühn, Ole ; Celis, Jean-Pierre ; Van Hoof, Christiaan ; Baert, K ; Ruythooren, W</creatorcontrib><description>The filling of microvias with diameters between 30 and 100 μm and aspect ratios up to 2.5 in silicon wafers, was investigated to determine the performance of copper electroplating. An electrolyte with a low leveler concentration was only suitable for filling microvias with aspect ratios below 1. An increase of the leveler concentration enabled the filling of microvias with higher aspect ratios. The fill-up evolution shows a bottom-up plating behavior. Electrochemical measurements show that for conditions prevailing at the bottom of the via, the electrodeposition rate is enhanced while for conditions prevailing at the top, it is inhibited. This difference originates from a concentration gradient of leveler inside the via and different convection conditions inside and outside the via.</description><identifier>ISSN: 1938-5862</identifier><language>eng</language><publisher>The Electrochemical Society</publisher><ispartof>ECS Transactions, Electrochemical Society Transactions, 2007, Vol.6 (8), p.123-133</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,315,776,780,4010,27837</link.rule.ids></links><search><creatorcontrib>Lühn, Ole</creatorcontrib><creatorcontrib>Celis, Jean-Pierre</creatorcontrib><creatorcontrib>Van Hoof, Christiaan</creatorcontrib><creatorcontrib>Baert, K</creatorcontrib><creatorcontrib>Ruythooren, W</creatorcontrib><title>Leveling of microvias by electroplating for wafer-level-packaging</title><title>ECS Transactions, Electrochemical Society Transactions</title><description>The filling of microvias with diameters between 30 and 100 μm and aspect ratios up to 2.5 in silicon wafers, was investigated to determine the performance of copper electroplating. An electrolyte with a low leveler concentration was only suitable for filling microvias with aspect ratios below 1. An increase of the leveler concentration enabled the filling of microvias with higher aspect ratios. The fill-up evolution shows a bottom-up plating behavior. Electrochemical measurements show that for conditions prevailing at the bottom of the via, the electrodeposition rate is enhanced while for conditions prevailing at the top, it is inhibited. This difference originates from a concentration gradient of leveler inside the via and different convection conditions inside and outside the via.</description><issn>1938-5862</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>FZOIL</sourceid><recordid>eNpjYeA0tDS20DW1MDPiYOAqLs4yMDAzNDQx52Rw9EktS83JzEtXyE9TyM1MLsovy0wsVkiqVEjNSU0uKcovyEksAUmn5RcplCempRbp5oB06BYkJmcnpgNleBhY0xJzilN5oTQ3g7qba4izh252aU5qaVlqXnxKMVBxaryhkbGJqZm5hWW8oaWlkYWpMSkqtYlTGV9SUWIMAJliR_g</recordid><startdate>2007</startdate><enddate>2007</enddate><creator>Lühn, Ole</creator><creator>Celis, Jean-Pierre</creator><creator>Van Hoof, Christiaan</creator><creator>Baert, K</creator><creator>Ruythooren, W</creator><general>The Electrochemical Society</general><scope>FZOIL</scope></search><sort><creationdate>2007</creationdate><title>Leveling of microvias by electroplating for wafer-level-packaging</title><author>Lühn, Ole ; Celis, Jean-Pierre ; Van Hoof, Christiaan ; Baert, K ; Ruythooren, W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kuleuven_dspace_123456789_1992853</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Lühn, Ole</creatorcontrib><creatorcontrib>Celis, Jean-Pierre</creatorcontrib><creatorcontrib>Van Hoof, Christiaan</creatorcontrib><creatorcontrib>Baert, K</creatorcontrib><creatorcontrib>Ruythooren, W</creatorcontrib><collection>Lirias (KU Leuven Association)</collection><jtitle>ECS Transactions, Electrochemical Society Transactions</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lühn, Ole</au><au>Celis, Jean-Pierre</au><au>Van Hoof, Christiaan</au><au>Baert, K</au><au>Ruythooren, W</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Leveling of microvias by electroplating for wafer-level-packaging</atitle><jtitle>ECS Transactions, Electrochemical Society Transactions</jtitle><date>2007</date><risdate>2007</risdate><volume>6</volume><issue>8</issue><spage>123</spage><epage>133</epage><pages>123-133</pages><issn>1938-5862</issn><abstract>The filling of microvias with diameters between 30 and 100 μm and aspect ratios up to 2.5 in silicon wafers, was investigated to determine the performance of copper electroplating. An electrolyte with a low leveler concentration was only suitable for filling microvias with aspect ratios below 1. An increase of the leveler concentration enabled the filling of microvias with higher aspect ratios. The fill-up evolution shows a bottom-up plating behavior. Electrochemical measurements show that for conditions prevailing at the bottom of the via, the electrodeposition rate is enhanced while for conditions prevailing at the top, it is inhibited. This difference originates from a concentration gradient of leveler inside the via and different convection conditions inside and outside the via.</abstract><pub>The Electrochemical Society</pub></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS Transactions, Electrochemical Society Transactions, 2007, Vol.6 (8), p.123-133
issn 1938-5862
language eng
recordid cdi_kuleuven_dspace_123456789_199285
source Lirias (KU Leuven Association); IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link
title Leveling of microvias by electroplating for wafer-level-packaging
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T09%3A41%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kuleuven&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Leveling%20of%20microvias%20by%20electroplating%20for%20wafer-level-packaging&rft.jtitle=ECS%20Transactions,%20Electrochemical%20Society%20Transactions&rft.au=L%C3%BChn,%20Ole&rft.date=2007&rft.volume=6&rft.issue=8&rft.spage=123&rft.epage=133&rft.pages=123-133&rft.issn=1938-5862&rft_id=info:doi/&rft_dat=%3Ckuleuven%3E123456789_199285%3C/kuleuven%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true