Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors
We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobili...
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| Veröffentlicht in: | Journal of semiconductor technology and science 2016, Vol.16 (2), p.198-203 |
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| container_title | Journal of semiconductor technology and science |
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| creator | Song, Chang-Woo Kim, Kyung-Hyun Yang, Ji-Woong Kim, Dae-Hwan Choi, Yong-Jin Hong, Chan-Hwa Shin, Jae-Heon Kwon, Hyuck-In Song, Sang-Hun Cheong, Woo-Seok |
| description | We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs. |
| format | Article |
| fullrecord | <record><control><sourceid>kisti</sourceid><recordid>TN_cdi_kisti_ndsl_JAKO201614137726147</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>JAKO201614137726147</sourcerecordid><originalsourceid>FETCH-kisti_ndsl_JAKO2016141377261473</originalsourceid><addsrcrecordid>eNqNyr0OgjAUQOEOmkiUd7iLIwml0upoCMTfMNDJhaC20ogt6cXBt5fBB3D6hnMmJKDpZh1RnooZCRHNNU4ZE5wLEZAs11rdBgSn4fyA6t33XiE6D6fmozw4C0OrYG8vtrIlyNbYqDDdC6RvLBocnMcFmeqmQxX-nJNlkctsFz3Hbmp7x64-bI9lElNOV5QJkYwK9u_3BT7BN8U</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Song, Chang-Woo ; Kim, Kyung-Hyun ; Yang, Ji-Woong ; Kim, Dae-Hwan ; Choi, Yong-Jin ; Hong, Chan-Hwa ; Shin, Jae-Heon ; Kwon, Hyuck-In ; Song, Sang-Hun ; Cheong, Woo-Seok</creator><creatorcontrib>Song, Chang-Woo ; Kim, Kyung-Hyun ; Yang, Ji-Woong ; Kim, Dae-Hwan ; Choi, Yong-Jin ; Hong, Chan-Hwa ; Shin, Jae-Heon ; Kwon, Hyuck-In ; Song, Sang-Hun ; Cheong, Woo-Seok</creatorcontrib><description>We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.</description><identifier>ISSN: 1598-1657</identifier><language>kor</language><ispartof>Journal of semiconductor technology and science, 2016, Vol.16 (2), p.198-203</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,4010</link.rule.ids></links><search><creatorcontrib>Song, Chang-Woo</creatorcontrib><creatorcontrib>Kim, Kyung-Hyun</creatorcontrib><creatorcontrib>Yang, Ji-Woong</creatorcontrib><creatorcontrib>Kim, Dae-Hwan</creatorcontrib><creatorcontrib>Choi, Yong-Jin</creatorcontrib><creatorcontrib>Hong, Chan-Hwa</creatorcontrib><creatorcontrib>Shin, Jae-Heon</creatorcontrib><creatorcontrib>Kwon, Hyuck-In</creatorcontrib><creatorcontrib>Song, Sang-Hun</creatorcontrib><creatorcontrib>Cheong, Woo-Seok</creatorcontrib><title>Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors</title><title>Journal of semiconductor technology and science</title><addtitle>Journal of semiconductor technology and science</addtitle><description>We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.</description><issn>1598-1657</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><sourceid>JDI</sourceid><recordid>eNqNyr0OgjAUQOEOmkiUd7iLIwml0upoCMTfMNDJhaC20ogt6cXBt5fBB3D6hnMmJKDpZh1RnooZCRHNNU4ZE5wLEZAs11rdBgSn4fyA6t33XiE6D6fmozw4C0OrYG8vtrIlyNbYqDDdC6RvLBocnMcFmeqmQxX-nJNlkctsFz3Hbmp7x64-bI9lElNOV5QJkYwK9u_3BT7BN8U</recordid><startdate>2016</startdate><enddate>2016</enddate><creator>Song, Chang-Woo</creator><creator>Kim, Kyung-Hyun</creator><creator>Yang, Ji-Woong</creator><creator>Kim, Dae-Hwan</creator><creator>Choi, Yong-Jin</creator><creator>Hong, Chan-Hwa</creator><creator>Shin, Jae-Heon</creator><creator>Kwon, Hyuck-In</creator><creator>Song, Sang-Hun</creator><creator>Cheong, Woo-Seok</creator><scope>JDI</scope></search><sort><creationdate>2016</creationdate><title>Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors</title><author>Song, Chang-Woo ; Kim, Kyung-Hyun ; Yang, Ji-Woong ; Kim, Dae-Hwan ; Choi, Yong-Jin ; Hong, Chan-Hwa ; Shin, Jae-Heon ; Kwon, Hyuck-In ; Song, Sang-Hun ; Cheong, Woo-Seok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kisti_ndsl_JAKO2016141377261473</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>kor</language><creationdate>2016</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Song, Chang-Woo</creatorcontrib><creatorcontrib>Kim, Kyung-Hyun</creatorcontrib><creatorcontrib>Yang, Ji-Woong</creatorcontrib><creatorcontrib>Kim, Dae-Hwan</creatorcontrib><creatorcontrib>Choi, Yong-Jin</creatorcontrib><creatorcontrib>Hong, Chan-Hwa</creatorcontrib><creatorcontrib>Shin, Jae-Heon</creatorcontrib><creatorcontrib>Kwon, Hyuck-In</creatorcontrib><creatorcontrib>Song, Sang-Hun</creatorcontrib><creatorcontrib>Cheong, Woo-Seok</creatorcontrib><collection>KoreaScience</collection><jtitle>Journal of semiconductor technology and science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Song, Chang-Woo</au><au>Kim, Kyung-Hyun</au><au>Yang, Ji-Woong</au><au>Kim, Dae-Hwan</au><au>Choi, Yong-Jin</au><au>Hong, Chan-Hwa</au><au>Shin, Jae-Heon</au><au>Kwon, Hyuck-In</au><au>Song, Sang-Hun</au><au>Cheong, Woo-Seok</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors</atitle><jtitle>Journal of semiconductor technology and science</jtitle><addtitle>Journal of semiconductor technology and science</addtitle><date>2016</date><risdate>2016</risdate><volume>16</volume><issue>2</issue><spage>198</spage><epage>203</epage><pages>198-203</pages><issn>1598-1657</issn><abstract>We investigate the effects of magnesium (Mg) suppressor layer on the electrical performances and stabilities of amorphous indium-zinc-tin-oxide (a-ITZO) thin-film transistors (TFTs). Compared to the ITZO TFT without a Mg suppressor layer, the ITZO:Mg TFT exhibits slightly smaller field-effect mobility and much reduced subthreshold slope. The ITZO:Mg TFT shows improved electrical stabilities compared to the ITZO TFT under both positive-bias and negative-bias-illumination stresses. From the X-ray photoelectron spectroscopy O1s spectra with fitted curves for ITZO and ITZO:Mg films, we observe that Mg doping contributes to an enhancement of the oxygen bond without oxygen vacancy and a reduction of the oxygen bonds with oxygen vacancies. This result shows that the Mg can be an effective suppressor in a-ITZO TFTs.</abstract><oa>free_for_read</oa></addata></record> |
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| title | Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors |
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