A Novel Atomic Layer Deposited Al 2 O 3 Film with Diluted NH 4 OH for High-Efficient c-Si Solar Cell

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refr...

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Veröffentlicht in:	Journal of semiconductor technology and science 2014, Vol.14 (1), p.40-47
Hauptverfasser:	Oh, Sung-Kwen, Shin, Hong-Sik, Jeong, Kwang-Seok, Li, Meng, Lee, Horyeong, Han, Kyumin, Lee, Yongwoo, Lee, Ga-Won, Lee, Hi-Deok
Format:	Artikel
Sprache:	kor
Online-Zugang:	Volltext
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