High Output Power and High Fundamental Leakage Suppression Frequency Doubler MMIC for E-Band Transceiver
An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial $0.1-{\mu}m$ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mil thick substrate wafer...
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| Veröffentlicht in: | Journal of Electromagnetic Engineering and Science 2014, Vol.14 (4), p.342-345 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | kor |
| Online-Zugang: | Volltext |
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