A Subthreshold CMOS RF Front-End Design for Low-Power Band-Ⅲ T-DMB/DAB Receivers

A Subthreshold CMOS RF Front-End Design for Low-Power Band-Ⅲ T-DMB/DAB Receivers

This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves t...

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Veröffentlicht in:ETRI journal 2011-12, Vol.33 (6), p.969-972
Hauptverfasser: Kim, Seong-Do, Choi, Jang-Hong, Lee, Joo-Hyun, Koo, Bon-Tae, Kim, Cheon-Soo, Eum, Nak-Woong, Yu, Hyun-Kyu, Jung, Hee-Bum
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container_end_page 972
container_issue 6
container_start_page 969
container_title ETRI journal
container_volume 33
creator Kim, Seong-Do
Choi, Jang-Hong
Lee, Joo-Hyun
Koo, Bon-Tae
Kim, Cheon-Soo
Eum, Nak-Woong
Yu, Hyun-Kyu
Jung, Hee-Bum
description This letter presents a CMOS RF front-end operating in a subthreshold region for low-power Band-III mobile TV applications. The performance and feasibility of the RF front-end are verified by integrating with a low-IF RF tuner fabricated in a 0.13-${\mu}m$ CMOS technology. The RF front-end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front-end is 13.8 mW from a 1.2 V supply.
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title A Subthreshold CMOS RF Front-End Design for Low-Power Band-Ⅲ T-DMB/DAB Receivers
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