The Structural-Dependent Characteristics of Rashba Spin Transports in In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As Heterojunctions

The Structural-Dependent Characteristics of Rashba Spin Transports in In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As Heterojunctions

The growth and characterization of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface $In_{0.5}Ga_{0.5}As$ channe...

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Veröffentlicht in:Transactions on electrical and electronic materials 2011, Vol.12 (4), p.140-143
Hauptverfasser: Choi, Hyon-Kwang, Hwang, Sook-Hyun, Jeon, Min-Hyon, Yamda, Syoji
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creator Choi, Hyon-Kwang
Hwang, Sook-Hyun
Jeon, Min-Hyon
Yamda, Syoji
description The growth and characterization of $In_{0.5}Ga_{0.5}As/In_{0.5}Al_{0.5}As$ narrow-gap inverted high electron mobility transistor structures, developed as a candidate material for spin-injection devices, are presented in this study. We have grown samples possessing surface $In_{0.5}Ga_{0.5}As$ channels of different thicknesses (30 nm and 60 nm) both with and without a thin 3 nm $In_{0.5}Ga_{0.5}As$ cap layer by using molecular beam epitaxy. We then investigated the in-plane transport properties as well as the Rashba spin-orbit coupling constant of the two-dimensional electron gas confined at the heterojunction interface.
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title The Structural-Dependent Characteristics of Rashba Spin Transports in In 0.5 Ga 0.5 As/In 0.5 Al 0.5 As Heterojunctions
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