Analysis of Novel Helmholtz-inductively Coupled Plasma Source and Its Application for Nano-Scale MOSFETs
A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the waf...
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| Veröffentlicht in: | Transactions on electrical and electronic materials 2009-04, Vol.10 (2), p.35-39 |
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| container_title | Transactions on electrical and electronic materials |
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| creator | Park, Kun-Joo Kim, Kee-Hyun Lee, Weon-Mook Chae, Hee-Yeop Han, In-Shik Lee, Hi-Deok |
| description | A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers. |
| format | Article |
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Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.</description><identifier>ISSN: 1229-7607</identifier><identifier>EISSN: 2092-7592</identifier><language>kor</language><publisher>한국전기전자재료학회</publisher><subject>Gate etching ; Inductively coupled plasma ; Nano process ; Plasma density</subject><ispartof>Transactions on electrical and electronic materials, 2009-04, Vol.10 (2), p.35-39</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885</link.rule.ids></links><search><creatorcontrib>Park, Kun-Joo</creatorcontrib><creatorcontrib>Kim, Kee-Hyun</creatorcontrib><creatorcontrib>Lee, Weon-Mook</creatorcontrib><creatorcontrib>Chae, Hee-Yeop</creatorcontrib><creatorcontrib>Han, In-Shik</creatorcontrib><creatorcontrib>Lee, Hi-Deok</creatorcontrib><title>Analysis of Novel Helmholtz-inductively Coupled Plasma Source and Its Application for Nano-Scale MOSFETs</title><title>Transactions on electrical and electronic materials</title><addtitle>Transactions on Electrical and Electronic Materials</addtitle><description>A novel Helmholtz coil inductively coupled plasma(H-ICP) etcher is proposed and characterized for deep nano-scale CMOS technology. Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. 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Various hardware tests are performed while varying key parameters such as distance between the top and bottom coils, the distance between the chamber ceiling and the wafer, and the chamber height in order to determine the optimal design of the chamber and optimal process conditions. The uniformity was significantly improved by applying the optimum conditions. The plasma density obtained with the H-ICP source was about $5{\times}10^{11}/cm^3$, and the electron temperature was about 2-3 eV. The etching selectivity for the poly-silicon gate versus the ultra-thin gate oxide was 482:1 at 10 sccm of $HeO_2$. The proposed H-ICP was successfully applied to form multiple 60-nm poly-silicon gate layers.</abstract><pub>한국전기전자재료학회</pub><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
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| ispartof | Transactions on electrical and electronic materials, 2009-04, Vol.10 (2), p.35-39 |
| issn | 1229-7607 2092-7592 |
| language | kor |
| recordid | cdi_kisti_ndsl_JAKO200918133146006 |
| source | EZB-FREE-00999 freely available EZB journals; Alma/SFX Local Collection |
| subjects | Gate etching Inductively coupled plasma Nano process Plasma density |
| title | Analysis of Novel Helmholtz-inductively Coupled Plasma Source and Its Application for Nano-Scale MOSFETs |
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