Stepwise Ni-silicide Process for Parasitic Resistance Reduction for Silicon/metal Contact Junction

The parasitic resistance is studied to silicon/metal contact junction for improving device performance and to lower contact/serial resistance silicide in natural sequence. In this paper constructs the stepwise Ni silicide process for parasitic resistance reduction for silicon/metal contact junction....

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Veröffentlicht in:	Transactions on electrical and electronic materials 2008-08, Vol.9 (4), p.137-142
Hauptverfasser:	Choi, Hoon, Cho, Il-Whan, Hong, Sang-Jeen
Format:	Artikel
Sprache:	kor
Schlagworte:	Ni-silicide Sheet resistance Stepwise annealing
Online-Zugang:	Volltext
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