Hydrogen and Alkali Ion Sensing Properties of Ion Implanted Silicon Nitride Thin Film

B, P, and Cs ions were implanted with various parameters into silicon nitride layers prepared by LPCVD. In order to get the maximum impurity concentration at the silicon nitride surface, a high temperature oxide (HTO) buffer layers was deposited prior to the implantation. Alkali ion and pH sensing p...

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Veröffentlicht in:	Transactions on electrical and electronic materials 2008-12, Vol.9 (6), p.231-236
1. Verfasser:	Park, Gu-Bum
Format:	Artikel
Sprache:	kor
Schlagworte:	Ion implantation Ion sensitive field effect transistor Ion sensitivity ISFET Silicon nitride
Online-Zugang:	Volltext
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