A Sense Amplifier Scheme with Offset Cancellation for Giga-bit DRAM

To improve low sense margin at low voltage, we propose a negatively driven sensing (NDS) scheme and to solve the problem of WL-to-BL short leakage fail, a variable bitline reference scheme with free-level precharged bitline (FLPB) scheme is adopted. The influence of the threshold voltage offset of N...

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Veröffentlicht in:	Journal of semiconductor technology and science 2007, Vol.7 (2), p.67-75
Hauptverfasser:	Kang, Hee-Bok, Hong, Suk-Kyoung, Chang, Heon-Yong, Park, Hae-Chan, Park, Nam-Kyun, Sung, Man-Young, Ahn, Jin-Hong, Hong, Sung-Joo
Format:	Artikel
Sprache:	kor
Online-Zugang:	Volltext
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