High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer wa...
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Veröffentlicht in: | Journal of semiconductor technology and science 2003, Vol.3 (2), p.89-95 |
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creator | Uhm, Won-Young Lee, Bok-Hyung Kim, Sung-Chan Lee, Mun-Kyo Sul, Woo-Suk Yi, Sang-Yong Kim, Yong-Hoh Rhee, Jin-Koo |
description | In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz. |
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fullrecord | <record><control><sourceid>nurimedia_kisti</sourceid><recordid>TN_cdi_kisti_ndsl_JAKO200311922208201</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><nurid>NODE06513174</nurid><sourcerecordid>NODE06513174</sourcerecordid><originalsourceid>FETCH-LOGICAL-k604-ba3af95d544dccaa1813061a9439e95cc69fcf5c44a773cd0493394f2189027a3</originalsourceid><addsrcrecordid>eNpFjE1LwzAAQIMoWKf_IRePgXx_HEvtNudmFeu5ZGm6xW2pNNvQf29BwdN7h8e7ABmljCGupbwEGRFGIyKFugY3KX1gLLUyKgPTedhsYdHHsx9S6COc2RDhK1rb2MLcHcPZw7fTGm3tcOhjcHAVvvwA31OIm7HNE3yZl6v6Flx1dp_83R8noJ6WdTFHy2r2WORLtJOYj1NmOyNawXnrnLVEE4YlsYYz441wTprOdcJxbpVirsXcMGZ4R4k2mCrLJuD-d7sL6Ria2KZ9s8ifKooxI8RQSrGmmPx38TSEg2-DbT5HscN381w9lFgKwoji7AeaOFEa</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT</title><source>EZB-FREE-00999 freely available EZB journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Uhm, Won-Young ; Lee, Bok-Hyung ; Kim, Sung-Chan ; Lee, Mun-Kyo ; Sul, Woo-Suk ; Yi, Sang-Yong ; Kim, Yong-Hoh ; Rhee, Jin-Koo</creator><creatorcontrib>Uhm, Won-Young ; Lee, Bok-Hyung ; Kim, Sung-Chan ; Lee, Mun-Kyo ; Sul, Woo-Suk ; Yi, Sang-Yong ; Kim, Yong-Hoh ; Rhee, Jin-Koo</creatorcontrib><description>In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.</description><identifier>ISSN: 1598-1657</identifier><identifier>EISSN: 2233-4866</identifier><language>eng ; kor</language><publisher>대한전자공학회</publisher><ispartof>Journal of semiconductor technology and science, 2003, Vol.3 (2), p.89-95</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,780,784,885,4024</link.rule.ids></links><search><creatorcontrib>Uhm, Won-Young</creatorcontrib><creatorcontrib>Lee, Bok-Hyung</creatorcontrib><creatorcontrib>Kim, Sung-Chan</creatorcontrib><creatorcontrib>Lee, Mun-Kyo</creatorcontrib><creatorcontrib>Sul, Woo-Suk</creatorcontrib><creatorcontrib>Yi, Sang-Yong</creatorcontrib><creatorcontrib>Kim, Yong-Hoh</creatorcontrib><creatorcontrib>Rhee, Jin-Koo</creatorcontrib><title>High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT</title><title>Journal of semiconductor technology and science</title><addtitle>Journal of semiconductor technology and science</addtitle><description>In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.</description><issn>1598-1657</issn><issn>2233-4866</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2003</creationdate><recordtype>article</recordtype><sourceid>JDI</sourceid><recordid>eNpFjE1LwzAAQIMoWKf_IRePgXx_HEvtNudmFeu5ZGm6xW2pNNvQf29BwdN7h8e7ABmljCGupbwEGRFGIyKFugY3KX1gLLUyKgPTedhsYdHHsx9S6COc2RDhK1rb2MLcHcPZw7fTGm3tcOhjcHAVvvwA31OIm7HNE3yZl6v6Flx1dp_83R8noJ6WdTFHy2r2WORLtJOYj1NmOyNawXnrnLVEE4YlsYYz441wTprOdcJxbpVirsXcMGZ4R4k2mCrLJuD-d7sL6Ria2KZ9s8ifKooxI8RQSrGmmPx38TSEg2-DbT5HscN381w9lFgKwoji7AeaOFEa</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>Uhm, Won-Young</creator><creator>Lee, Bok-Hyung</creator><creator>Kim, Sung-Chan</creator><creator>Lee, Mun-Kyo</creator><creator>Sul, Woo-Suk</creator><creator>Yi, Sang-Yong</creator><creator>Kim, Yong-Hoh</creator><creator>Rhee, Jin-Koo</creator><general>대한전자공학회</general><scope>DBRKI</scope><scope>TDB</scope><scope>JDI</scope></search><sort><creationdate>2003</creationdate><title>High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT</title><author>Uhm, Won-Young ; Lee, Bok-Hyung ; Kim, Sung-Chan ; Lee, Mun-Kyo ; Sul, Woo-Suk ; Yi, Sang-Yong ; Kim, Yong-Hoh ; Rhee, Jin-Koo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-k604-ba3af95d544dccaa1813061a9439e95cc69fcf5c44a773cd0493394f2189027a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng ; kor</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Uhm, Won-Young</creatorcontrib><creatorcontrib>Lee, Bok-Hyung</creatorcontrib><creatorcontrib>Kim, Sung-Chan</creatorcontrib><creatorcontrib>Lee, Mun-Kyo</creatorcontrib><creatorcontrib>Sul, Woo-Suk</creatorcontrib><creatorcontrib>Yi, Sang-Yong</creatorcontrib><creatorcontrib>Kim, Yong-Hoh</creatorcontrib><creatorcontrib>Rhee, Jin-Koo</creatorcontrib><collection>DBPIA - 디비피아</collection><collection>Nurimedia DBPIA Journals</collection><collection>KoreaScience</collection><jtitle>Journal of semiconductor technology and science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Uhm, Won-Young</au><au>Lee, Bok-Hyung</au><au>Kim, Sung-Chan</au><au>Lee, Mun-Kyo</au><au>Sul, Woo-Suk</au><au>Yi, Sang-Yong</au><au>Kim, Yong-Hoh</au><au>Rhee, Jin-Koo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT</atitle><jtitle>Journal of semiconductor technology and science</jtitle><addtitle>Journal of semiconductor technology and science</addtitle><date>2003</date><risdate>2003</risdate><volume>3</volume><issue>2</issue><spage>89</spage><epage>95</epage><pages>89-95</pages><issn>1598-1657</issn><eissn>2233-4866</eissn><abstract>In this paper, we have designed and fabricated high conversion gain Q-band active sub-harmonic mixers for a receiver of millimeter wave wireless communication systems. The fabricated active sub-harmonic mixer uses 2nd harmonic signals of a low local oscillator (LO) frequency. The fabricated mixer was successfully integrated by using $0.1{\;}\mu\textrm{m}$GaAs pseudomorphic high electron mobility transistors (PHEMTs) and coplanar waveguide (CPW) structures. From the measurement, it shows that maximum conversion gain of 4.8 dB has obtained at a RF frequency of 40 GHz for 10 dBm LO power of 17.5 GHz. Conversion gain from the fabricated sub-harmonic mixer is one of the best reported thus far. And a phase noise of the 2nd harmonic was obtained -90.23 dBc/Hz at 100 kHz offset. The active sub-harmonic mixer also ensure a high degree of isolations, which are -35.8 dB from LO-to-IF and -40.5 dB from LO-to-RF, respectively, at a LO frequency of 17.5 GHz.</abstract><pub>대한전자공학회</pub><tpages>7</tpages><oa>free_for_read</oa></addata></record> |
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title | High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT |
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