Indium-Morin 착물에 관한 흡착벗김전압전류법적 연구
A sensitive adsorptive stripping voltammetric study was investigated on the complex of indium with morin at a hanging mercury drop electrode in 0.1 M acetate buffer (pH 3.20) solution. The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditi...
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| Veröffentlicht in: | Journal of the Korean Chemical Society 1991, Vol.35 (5), p.506-511 |
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| container_title | Journal of the Korean Chemical Society |
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| creator | 손세철(Se Chul Sohn) 엄태윤(Tae Yoon Eom) 하영경(Yeong Kyeong Ha) 정기석(Ki-Suk Jung) |
| description | A sensitive adsorptive stripping voltammetric study was investigated on the complex of indium with morin at a hanging mercury drop electrode in 0.1 M acetate buffer (pH 3.20) solution. The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditions were discussed on the reduction peak current of the adsorbed complex on the surface of HMDE. Interferences by other trace metals and surfactant were also discussed. Detection limit was 2.6 nM of indium after 90 second deposition time, and the relative standard deviation (n = 7) at 4${\mu}g$/l indium was 2.0%. In-Morin 착물에 대한 흡착벗김전압전류법적 연구를 HMDE를 사용하여 pH 3.20의 0.1M 아세테이트 완충용액에서 수행하였다. 흡착 현상들을 미분펄스전압전류법으로 관찰하였으며, HMDE의 표면에 흡착된 착물의 환원 전류에 미치는 여러 분석 조건들에 과하여 논의하였다. 또한 여러 다른 금속이온들과 계면활성제의 방해효과에 관해서도 검토하였다. 본 연구에서의 검출한계는 90초의 흡착시간을 적용하였을 때 2.6nM이었으며, 4${\mu}g$/l의 In을 7회 분석하였을 때 상대표준편차는 2.0%이었다. |
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The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditions were discussed on the reduction peak current of the adsorbed complex on the surface of HMDE. Interferences by other trace metals and surfactant were also discussed. Detection limit was 2.6 nM of indium after 90 second deposition time, and the relative standard deviation (n = 7) at 4${\mu}g$/l indium was 2.0%. In-Morin 착물에 대한 흡착벗김전압전류법적 연구를 HMDE를 사용하여 pH 3.20의 0.1M 아세테이트 완충용액에서 수행하였다. 흡착 현상들을 미분펄스전압전류법으로 관찰하였으며, HMDE의 표면에 흡착된 착물의 환원 전류에 미치는 여러 분석 조건들에 과하여 논의하였다. 또한 여러 다른 금속이온들과 계면활성제의 방해효과에 관해서도 검토하였다. 본 연구에서의 검출한계는 90초의 흡착시간을 적용하였을 때 2.6nM이었으며, 4${\mu}g$/l의 In을 7회 분석하였을 때 상대표준편차는 2.0%이었다.</description><identifier>ISSN: 1017-2548</identifier><identifier>EISSN: 2234-8530</identifier><language>kor</language><publisher>대한화학회</publisher><ispartof>Journal of the Korean Chemical Society, 1991, Vol.35 (5), p.506-511</ispartof><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>230,314,776,780,881,4010</link.rule.ids></links><search><creatorcontrib>손세철(Se Chul Sohn)</creatorcontrib><creatorcontrib>엄태윤(Tae Yoon Eom)</creatorcontrib><creatorcontrib>하영경(Yeong Kyeong Ha)</creatorcontrib><creatorcontrib>정기석(Ki-Suk Jung)</creatorcontrib><title>Indium-Morin 착물에 관한 흡착벗김전압전류법적 연구</title><title>Journal of the Korean Chemical Society</title><addtitle>Journal of the Korean Chemical Society</addtitle><description>A sensitive adsorptive stripping voltammetric study was investigated on the complex of indium with morin at a hanging mercury drop electrode in 0.1 M acetate buffer (pH 3.20) solution. The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditions were discussed on the reduction peak current of the adsorbed complex on the surface of HMDE. Interferences by other trace metals and surfactant were also discussed. Detection limit was 2.6 nM of indium after 90 second deposition time, and the relative standard deviation (n = 7) at 4${\mu}g$/l indium was 2.0%. In-Morin 착물에 대한 흡착벗김전압전류법적 연구를 HMDE를 사용하여 pH 3.20의 0.1M 아세테이트 완충용액에서 수행하였다. 흡착 현상들을 미분펄스전압전류법으로 관찰하였으며, HMDE의 표면에 흡착된 착물의 환원 전류에 미치는 여러 분석 조건들에 과하여 논의하였다. 또한 여러 다른 금속이온들과 계면활성제의 방해효과에 관해서도 검토하였다. 본 연구에서의 검출한계는 90초의 흡착시간을 적용하였을 때 2.6nM이었으며, 4${\mu}g$/l의 In을 7회 분석하였을 때 상대표준편차는 2.0%이었다.</description><issn>1017-2548</issn><issn>2234-8530</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1991</creationdate><recordtype>article</recordtype><sourceid>JDI</sourceid><recordid>eNpFjs1Kw0AUhQdRMNS-QzYuA7m5mczMssSq1Wo33Yf8DQxtoyR24a6CD-AmxEUFXbgQuihFF4JPlKTv4IiCm3s-Dh-Hu0MMx0HX4hTtXWKADcxyqMv3SbcoVGRTRMZsgQbxB1mi5jPr4ipXmdmu35rVV1s9mPX7Ylsuze3Ty0-3qerPRft835alvs3rY7PRcGe21br-WB2QPRlOi7T7lx0yPu6P_VNrODoZ-L2hNeGOZ6VCpIC2x5EmMhacUQ-RRvpNSmPJYg2AzJFcSClBMmBRxGzP5SCQpzHHDjn8nZ2o4kYFWVJMg7Pe-QiEAEDXcykAZd6_l81zNUsTFQbXGsL8NrgcHfW15ALX3jcn9mLG</recordid><startdate>1991</startdate><enddate>1991</enddate><creator>손세철(Se Chul Sohn)</creator><creator>엄태윤(Tae Yoon Eom)</creator><creator>하영경(Yeong Kyeong Ha)</creator><creator>정기석(Ki-Suk Jung)</creator><general>대한화학회</general><scope>DBRKI</scope><scope>TDB</scope><scope>JDI</scope></search><sort><creationdate>1991</creationdate><title>Indium-Morin 착물에 관한 흡착벗김전압전류법적 연구</title><author>손세철(Se Chul Sohn) ; 엄태윤(Tae Yoon Eom) ; 하영경(Yeong Kyeong Ha) ; 정기석(Ki-Suk Jung)</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-k826-e99e1306835dfc98756335b23455cf7c2341372f89fff1f717bb706481938ec83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>kor</language><creationdate>1991</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>손세철(Se Chul Sohn)</creatorcontrib><creatorcontrib>엄태윤(Tae Yoon Eom)</creatorcontrib><creatorcontrib>하영경(Yeong Kyeong Ha)</creatorcontrib><creatorcontrib>정기석(Ki-Suk Jung)</creatorcontrib><collection>DBPIA - 디비피아</collection><collection>DBPIA</collection><collection>KoreaScience</collection><jtitle>Journal of the Korean Chemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>손세철(Se Chul Sohn)</au><au>엄태윤(Tae Yoon Eom)</au><au>하영경(Yeong Kyeong Ha)</au><au>정기석(Ki-Suk Jung)</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Indium-Morin 착물에 관한 흡착벗김전압전류법적 연구</atitle><jtitle>Journal of the Korean Chemical Society</jtitle><addtitle>Journal of the Korean Chemical Society</addtitle><date>1991</date><risdate>1991</risdate><volume>35</volume><issue>5</issue><spage>506</spage><epage>511</epage><pages>506-511</pages><issn>1017-2548</issn><eissn>2234-8530</eissn><abstract>A sensitive adsorptive stripping voltammetric study was investigated on the complex of indium with morin at a hanging mercury drop electrode in 0.1 M acetate buffer (pH 3.20) solution. The adsorption phenomena were observed by differential-pulse voltammetry. The effects of various analytical conditions were discussed on the reduction peak current of the adsorbed complex on the surface of HMDE. Interferences by other trace metals and surfactant were also discussed. Detection limit was 2.6 nM of indium after 90 second deposition time, and the relative standard deviation (n = 7) at 4${\mu}g$/l indium was 2.0%. In-Morin 착물에 대한 흡착벗김전압전류법적 연구를 HMDE를 사용하여 pH 3.20의 0.1M 아세테이트 완충용액에서 수행하였다. 흡착 현상들을 미분펄스전압전류법으로 관찰하였으며, HMDE의 표면에 흡착된 착물의 환원 전류에 미치는 여러 분석 조건들에 과하여 논의하였다. 또한 여러 다른 금속이온들과 계면활성제의 방해효과에 관해서도 검토하였다. 본 연구에서의 검출한계는 90초의 흡착시간을 적용하였을 때 2.6nM이었으며, 4${\mu}g$/l의 In을 7회 분석하였을 때 상대표준편차는 2.0%이었다.</abstract><pub>대한화학회</pub><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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| title | Indium-Morin 착물에 관한 흡착벗김전압전류법적 연구 |
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