Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the thr...

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Veröffentlicht in:	Transactions on electrical and electronic materials 2014-12, Vol.15 (6), p.315
Hauptverfasser:	Jin Seob Kim, Yu Mi Kim, Kwnag Seok Jeong, Ho Jin Yun, Seung Dong Yang, Seong Hyeon Kim, Jin Un An, Young Uk Ko, Ca Won Lee
Format:	Artikel
Sprache:	kor
Schlagworte:	a-IGZO Light stress mechanism Negative-U center Oxygen vacancy
Online-Zugang:	Volltext
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