Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates

Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates

In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the thr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Transactions on electrical and electronic materials 2014-12, Vol.15 (6), p.315
Hauptverfasser: Jin Seob Kim, Yu Mi Kim, Kwnag Seok Jeong, Ho Jin Yun, Seung Dong Yang, Seong Hyeon Kim, Jin Un An, Young Uk Ko, Ca Won Lee
Format: Artikel
Sprache:kor
Schlagworte:
a-IGZO
Light stress mechanism
Negative-U center
Oxygen vacancy
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 6
container_start_page 315
container_title Transactions on electrical and electronic materials
container_volume 15
creator Jin Seob Kim
Yu Mi Kim
Kwnag Seok Jeong
Ho Jin Yun
Seung Dong Yang
Seong Hyeon Kim
Jin Un An
Young Uk Ko
Ca Won Lee
description In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) under illumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in VTH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.
format Article
fullrecord <record><control><sourceid>kiss</sourceid><recordid>TN_cdi_kiss_primary_3290533</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><kiss_id>3290533</kiss_id><sourcerecordid>3290533</sourcerecordid><originalsourceid>FETCH-kiss_primary_32905333</originalsourceid><addsrcrecordid>eNp9jE1OAkEQRnshiQQ4gZu6QCfzAwLuFBglMWDI6MINKZiangpND-lqxLkCp3YWrF295Htf3p3qxkky1ePHaHyvBiK8i6I4Hk7i4airrhsyZ4sePvBEHp7gGd7ZVEGzK857KiCvPElV2wK-ahvQECydBNyx5dDAC0r7qR0grMhg4B_SnzAjF9oYt7Nevn6vIc9ygQuHCuZcluRbD-vfxpCDzNYX2GAg6atOiVZocGNPPWSLfPamDyyyPXk-om-2aTKNRmma_m__AAyKTEg</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates</title><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Alma/SFX Local Collection</source><creator>Jin Seob Kim ; Yu Mi Kim ; Kwnag Seok Jeong ; Ho Jin Yun ; Seung Dong Yang ; Seong Hyeon Kim ; Jin Un An ; Young Uk Ko ; Ca Won Lee</creator><creatorcontrib>Jin Seob Kim ; Yu Mi Kim ; Kwnag Seok Jeong ; Ho Jin Yun ; Seung Dong Yang ; Seong Hyeon Kim ; Jin Un An ; Young Uk Ko ; Ca Won Lee</creatorcontrib><description>In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) under illumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in VTH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.</description><identifier>ISSN: 1229-7607</identifier><language>kor</language><publisher>한국전기전자재료학회</publisher><subject>a-IGZO ; Light stress mechanism ; Negative-U center ; Oxygen vacancy</subject><ispartof>Transactions on electrical and electronic materials, 2014-12, Vol.15 (6), p.315</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782</link.rule.ids></links><search><creatorcontrib>Jin Seob Kim</creatorcontrib><creatorcontrib>Yu Mi Kim</creatorcontrib><creatorcontrib>Kwnag Seok Jeong</creatorcontrib><creatorcontrib>Ho Jin Yun</creatorcontrib><creatorcontrib>Seung Dong Yang</creatorcontrib><creatorcontrib>Seong Hyeon Kim</creatorcontrib><creatorcontrib>Jin Un An</creatorcontrib><creatorcontrib>Young Uk Ko</creatorcontrib><creatorcontrib>Ca Won Lee</creatorcontrib><title>Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates</title><title>Transactions on electrical and electronic materials</title><addtitle>Transactions on Electrical and Electronic Materials</addtitle><description>In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) under illumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in VTH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.</description><subject>a-IGZO</subject><subject>Light stress mechanism</subject><subject>Negative-U center</subject><subject>Oxygen vacancy</subject><issn>1229-7607</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9jE1OAkEQRnshiQQ4gZu6QCfzAwLuFBglMWDI6MINKZiangpND-lqxLkCp3YWrF295Htf3p3qxkky1ePHaHyvBiK8i6I4Hk7i4airrhsyZ4sePvBEHp7gGd7ZVEGzK857KiCvPElV2wK-ahvQECydBNyx5dDAC0r7qR0grMhg4B_SnzAjF9oYt7Nevn6vIc9ygQuHCuZcluRbD-vfxpCDzNYX2GAg6atOiVZocGNPPWSLfPamDyyyPXk-om-2aTKNRmma_m__AAyKTEg</recordid><startdate>20141215</startdate><enddate>20141215</enddate><creator>Jin Seob Kim</creator><creator>Yu Mi Kim</creator><creator>Kwnag Seok Jeong</creator><creator>Ho Jin Yun</creator><creator>Seung Dong Yang</creator><creator>Seong Hyeon Kim</creator><creator>Jin Un An</creator><creator>Young Uk Ko</creator><creator>Ca Won Lee</creator><general>한국전기전자재료학회</general><scope>HZB</scope><scope>Q5X</scope></search><sort><creationdate>20141215</creationdate><title>Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates</title><author>Jin Seob Kim ; Yu Mi Kim ; Kwnag Seok Jeong ; Ho Jin Yun ; Seung Dong Yang ; Seong Hyeon Kim ; Jin Un An ; Young Uk Ko ; Ca Won Lee</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-kiss_primary_32905333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>kor</language><creationdate>2014</creationdate><topic>a-IGZO</topic><topic>Light stress mechanism</topic><topic>Negative-U center</topic><topic>Oxygen vacancy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jin Seob Kim</creatorcontrib><creatorcontrib>Yu Mi Kim</creatorcontrib><creatorcontrib>Kwnag Seok Jeong</creatorcontrib><creatorcontrib>Ho Jin Yun</creatorcontrib><creatorcontrib>Seung Dong Yang</creatorcontrib><creatorcontrib>Seong Hyeon Kim</creatorcontrib><creatorcontrib>Jin Un An</creatorcontrib><creatorcontrib>Young Uk Ko</creatorcontrib><creatorcontrib>Ca Won Lee</creatorcontrib><collection>Korean Studies Information Service System (KISS)</collection><collection>Korean Studies Information Service System (KISS) B-Type</collection><jtitle>Transactions on electrical and electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jin Seob Kim</au><au>Yu Mi Kim</au><au>Kwnag Seok Jeong</au><au>Ho Jin Yun</au><au>Seung Dong Yang</au><au>Seong Hyeon Kim</au><au>Jin Un An</au><au>Young Uk Ko</au><au>Ca Won Lee</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates</atitle><jtitle>Transactions on electrical and electronic materials</jtitle><addtitle>Transactions on Electrical and Electronic Materials</addtitle><date>2014-12-15</date><risdate>2014</risdate><volume>15</volume><issue>6</issue><spage>315</spage><pages>315-</pages><issn>1229-7607</issn><abstract>In this paper, we investigate visible light stress instability in radio frequency (RF) sputtered a-IGZO thin film transistors (TFTs). The oxygen flow rate differs during deposition to control the concentration of oxygen vacancies, which is confirmed via RT PL. A negative shift is observed in the threshold voltage (VTH) under illumination with/without the gate bias, and the amount of shift in VTH is proportional to the concentration of oxygen vacancies. This can be explained to be consistent with the ionization oxygen vacancy model where the instability in VTH under illumination is caused by the increase in the channel conductivity by electrons that are photo-generated from oxygen vacancies, and it is maintained after the illumination is removed due to the negative-U center properties.</abstract><pub>한국전기전자재료학회</pub><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1229-7607
ispartof Transactions on electrical and electronic materials, 2014-12, Vol.15 (6), p.315
issn 1229-7607
language kor
recordid cdi_kiss_primary_3290533
source Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Alma/SFX Local Collection
subjects a-IGZO
Light stress mechanism
Negative-U center
Oxygen vacancy
title Regular Paper : A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-16T15%3A32%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-kiss&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Regular%20Paper%20:%20A%20Light-induced%20Threshold%20Voltage%20Instability%20Based%20on%20a%20Negative-U%20Center%20in%20a-IGZO%20TFTs%20with%20Different%20Oxygen%20Flow%20Rates&rft.jtitle=Transactions%20on%20electrical%20and%20electronic%20materials&rft.au=Jin%20Seob%20Kim&rft.date=2014-12-15&rft.volume=15&rft.issue=6&rft.spage=315&rft.pages=315-&rft.issn=1229-7607&rft_id=info:doi/&rft_dat=%3Ckiss%3E3290533%3C/kiss%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_kiss_id=3290533&rfr_iscdi=true