self-consistent theory for graphene transport
We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged imp...
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Veröffentlicht in: | Proceedings of the National Academy of Sciences - PNAS 2007-11, Vol.104 (47), p.18392-18397 |
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container_title | Proceedings of the National Academy of Sciences - PNAS |
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creator | Adam, Shaffique Hwang, E.H Galitski, V.M Das Sarma, S |
description | We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities nimp. For dirty samples (250 x 10¹⁰ cm⁻² < nimp < 400 x 10¹⁰ cm⁻²), the value of the minimum conductivity at low carrier density is indeed 4e²/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on nimp, increasing to 8e²/h for nimp [almost equal to] 20 x 10¹⁰ cm⁻². A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant. |
doi_str_mv | 10.1073/pnas.0704772104 |
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We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities nimp. For dirty samples (250 x 10¹⁰ cm⁻² < nimp < 400 x 10¹⁰ cm⁻²), the value of the minimum conductivity at low carrier density is indeed 4e²/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on nimp, increasing to 8e²/h for nimp [almost equal to] 20 x 10¹⁰ cm⁻². A clear strategy to improve graphene mobility is to eliminate charged impurities or use a substrate with a larger dielectric constant.</description><identifier>ISSN: 0027-8424</identifier><identifier>EISSN: 1091-6490</identifier><identifier>DOI: 10.1073/pnas.0704772104</identifier><identifier>PMID: 18003926</identifier><language>eng</language><publisher>United States: National Academy of Sciences</publisher><subject>Approximation ; Charge carriers ; Charge density ; Conductivity ; Dielectric properties ; Electric potential ; Electrons ; Graphene ; Impurities ; Magnetic fields ; Physical Sciences ; Physics ; Theory ; Transport phenomena</subject><ispartof>Proceedings of the National Academy of Sciences - PNAS, 2007-11, Vol.104 (47), p.18392-18397</ispartof><rights>Copyright 2007 The National Academy of Sciences of the United States of America</rights><rights>Copyright National Academy of Sciences Nov 20, 2007</rights><rights>2007 by The National Academy of Sciences of the USA 2007</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c589t-5aea87a3bbd7c19e0d5a29aafd9806c009ff41d2c26a23b9ba4024ce86939f03</citedby><cites>FETCH-LOGICAL-c589t-5aea87a3bbd7c19e0d5a29aafd9806c009ff41d2c26a23b9ba4024ce86939f03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttp://www.pnas.org/content/104/47.cover.gif</thumbnail><linktopdf>$$Uhttps://www.jstor.org/stable/pdf/25450435$$EPDF$$P50$$Gjstor$$H</linktopdf><linktohtml>$$Uhttps://www.jstor.org/stable/25450435$$EHTML$$P50$$Gjstor$$H</linktohtml><link.rule.ids>230,314,723,776,780,799,881,27901,27902,53766,53768,57992,58225</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/18003926$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Adam, Shaffique</creatorcontrib><creatorcontrib>Hwang, E.H</creatorcontrib><creatorcontrib>Galitski, V.M</creatorcontrib><creatorcontrib>Das Sarma, S</creatorcontrib><title>self-consistent theory for graphene transport</title><title>Proceedings of the National Academy of Sciences - PNAS</title><addtitle>Proc Natl Acad Sci U S A</addtitle><description>We demonstrate theoretically that most of the observed transport properties of graphene sheets at zero magnetic field can be explained by scattering from charged impurities. We find that, contrary to common perception, these properties are not universal but depend on the concentration of charged impurities nimp. For dirty samples (250 x 10¹⁰ cm⁻² < nimp < 400 x 10¹⁰ cm⁻²), the value of the minimum conductivity at low carrier density is indeed 4e²/h in agreement with early experiments, with weak dependence on impurity concentration. For cleaner samples, we predict that the minimum conductivity depends strongly on nimp, increasing to 8e²/h for nimp [almost equal to] 20 x 10¹⁰ cm⁻². 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subjects | Approximation Charge carriers Charge density Conductivity Dielectric properties Electric potential Electrons Graphene Impurities Magnetic fields Physical Sciences Physics Theory Transport phenomena |
title | self-consistent theory for graphene transport |
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