Formation and Transportation of Intergranular and Nodular Fine-Grained β-SiC in Reaction-Sintered SiC
Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering...
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| Veröffentlicht in: | Advanced Ceramic Materials 1988-11, Vol.3 (6), p.590-594 |
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| creator | LIM, CHANG-BIN ISEKI, TAKAYOSHI |
| description | Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen. |
| doi_str_mv | 10.1111/j.1551-2916.1988.tb00284.x |
| format | Article |
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The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen.</description><identifier>ISSN: 0883-5551</identifier><identifier>EISSN: 1551-2916</identifier><identifier>DOI: 10.1111/j.1551-2916.1988.tb00284.x</identifier><language>eng</language><publisher>Oxford, UK: Blackwell Publishing Ltd</publisher><subject>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication ; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies ; CARBIDES ; CARBON COMPOUNDS ; CRYSTAL STRUCTURE ; DATA ; EXPERIMENTAL DATA ; FABRICATION ; GRAIN SIZE ; INFORMATION ; MATERIALS SCIENCE ; MEASURING METHODS ; MICROSTRUCTURE ; NUMERICAL DATA ; SILICON CARBIDES ; SILICON COMPOUNDS ; SINTERING ; SIZE ; VERY HIGH TEMPERATURE</subject><ispartof>Advanced Ceramic Materials, 1988-11, Vol.3 (6), p.590-594</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-378ed3838776e7abb4691eebca71d91e0356f4218d9484ebab844877bdbb15b73</citedby><cites>FETCH-LOGICAL-c359t-378ed3838776e7abb4691eebca71d91e0356f4218d9484ebab844877bdbb15b73</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,883,27911,27912</link.rule.ids><backlink>$$Uhttps://www.osti.gov/biblio/5998433$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>LIM, CHANG-BIN</creatorcontrib><creatorcontrib>ISEKI, TAKAYOSHI</creatorcontrib><title>Formation and Transportation of Intergranular and Nodular Fine-Grained β-SiC in Reaction-Sintered SiC</title><title>Advanced Ceramic Materials</title><description>Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen.</description><subject>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication</subject><subject>360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies</subject><subject>CARBIDES</subject><subject>CARBON COMPOUNDS</subject><subject>CRYSTAL STRUCTURE</subject><subject>DATA</subject><subject>EXPERIMENTAL DATA</subject><subject>FABRICATION</subject><subject>GRAIN SIZE</subject><subject>INFORMATION</subject><subject>MATERIALS SCIENCE</subject><subject>MEASURING METHODS</subject><subject>MICROSTRUCTURE</subject><subject>NUMERICAL DATA</subject><subject>SILICON CARBIDES</subject><subject>SILICON COMPOUNDS</subject><subject>SINTERING</subject><subject>SIZE</subject><subject>VERY HIGH TEMPERATURE</subject><issn>0883-5551</issn><issn>1551-2916</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kNFOwjAYhRujiQR5h4X7zpa2a-edQUESglFQuWvardMibKatCb6WD-Iz2TFCb_6_53znvzgADDFKcXzXmxQzhuEox1mKcyHSoBEaCZruz0DvZJ2DHhKCQBaFSzDw3kYKUUwYQT1QTRq3U8E2daLqMlk5VfuvxoVOaqpkVgfj3qP8vVXuwCya8rBPbG3g1Kk4yuTvFy7tOLF18mxU0Ybjv41GLxpX4KJSW28Gx9kHL5P71fgBzh-ns_HtHBaE5QESLkxJBBGcZ4YrrWmWY2N0oTgu44YIyyo6wqLMqaBGKy0ojbAutcZMc9IHw-5u44OVvrDBFB9FU9emCJLluaCEROimgwrXeO9MJb-c3Sn3IzGSbbNyI9v6ZFufbJuVx2blPoZhF7Y-mP0pqdynzDjhTL4tpnJ9N316XS-XEpF_vjB-Vw</recordid><startdate>19881101</startdate><enddate>19881101</enddate><creator>LIM, CHANG-BIN</creator><creator>ISEKI, TAKAYOSHI</creator><general>Blackwell Publishing Ltd</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19881101</creationdate><title>Formation and Transportation of Intergranular and Nodular Fine-Grained β-SiC in Reaction-Sintered SiC</title><author>LIM, CHANG-BIN ; ISEKI, TAKAYOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-378ed3838776e7abb4691eebca71d91e0356f4218d9484ebab844877bdbb15b73</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication</topic><topic>360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies</topic><topic>CARBIDES</topic><topic>CARBON COMPOUNDS</topic><topic>CRYSTAL STRUCTURE</topic><topic>DATA</topic><topic>EXPERIMENTAL DATA</topic><topic>FABRICATION</topic><topic>GRAIN SIZE</topic><topic>INFORMATION</topic><topic>MATERIALS SCIENCE</topic><topic>MEASURING METHODS</topic><topic>MICROSTRUCTURE</topic><topic>NUMERICAL DATA</topic><topic>SILICON CARBIDES</topic><topic>SILICON COMPOUNDS</topic><topic>SINTERING</topic><topic>SIZE</topic><topic>VERY HIGH TEMPERATURE</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LIM, CHANG-BIN</creatorcontrib><creatorcontrib>ISEKI, TAKAYOSHI</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Advanced Ceramic Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LIM, CHANG-BIN</au><au>ISEKI, TAKAYOSHI</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Formation and Transportation of Intergranular and Nodular Fine-Grained β-SiC in Reaction-Sintered SiC</atitle><jtitle>Advanced Ceramic Materials</jtitle><date>1988-11-01</date><risdate>1988</risdate><volume>3</volume><issue>6</issue><spage>590</spage><epage>594</epage><pages>590-594</pages><issn>0883-5551</issn><eissn>1551-2916</eissn><abstract>Quantitative characterization of the microstructure of reaction-sintered SiC bodies prepared under various conditions was performed experimentally to observe the formation and transportation of both intergranular fine-grained and nodular fine-grained {beta}-SiC. The results showed that, by lowering the sintering temperature (min. {approx} 1,420{degree}C), the quantity of {beta}-SiC increased progressively from the outside of the specimen toward its center. However, the {beta}-SiC was almost completely transported onto the larger grain through liquid Si at 1,600{degree}C under vacuum. It was concluded that the formation of the fine-grained {beta}-SiC was due to the higher degree of supersaturation in the lower temperature outer region of the specimen.</abstract><cop>Oxford, UK</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1111/j.1551-2916.1988.tb00284.x</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0883-5551 |
| ispartof | Advanced Ceramic Materials, 1988-11, Vol.3 (6), p.590-594 |
| issn | 0883-5551 1551-2916 |
| language | eng |
| recordid | cdi_istex_primary_ark_67375_WNG_XDGQVXSS_0 |
| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 360201 - Ceramics, Cermets, & Refractories- Preparation & Fabrication 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies CARBIDES CARBON COMPOUNDS CRYSTAL STRUCTURE DATA EXPERIMENTAL DATA FABRICATION GRAIN SIZE INFORMATION MATERIALS SCIENCE MEASURING METHODS MICROSTRUCTURE NUMERICAL DATA SILICON CARBIDES SILICON COMPOUNDS SINTERING SIZE VERY HIGH TEMPERATURE |
| title | Formation and Transportation of Intergranular and Nodular Fine-Grained β-SiC in Reaction-Sintered SiC |
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