Sol−Gel Fabrication of Dielectric HfO2 Nano-Films; Formation of Uniform, Void-Free Layers and Their Superior Electrical Properties

Solution-based fabrication of a high-quality metal oxide nano-film (∼10-nm thickness) by the surface sol−gel process and postannealing is reported. Hafnium(IV) n-butoxide in toluene−ethanol was chemisorbed onto hydroxylated Si wafer to give a uniform gel layer, of which alkoxide group was then hydro...

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Veröffentlicht in:	Chemistry of materials 2005-01, Vol.17 (2), p.450-458
Hauptverfasser:	Aoki, Yoshitaka, Kunitake, Toyoki, Nakao, Aiko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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