Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al f...
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| Veröffentlicht in: | Europhysics letters 2014-06, Vol.106 (6), p.67006, Article 67006 |
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| container_title | Europhysics letters |
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| creator | Delahaye, J. Grenet, T. Marrache-Kikuchi, C. A. Drillien, A. A. Bergé, L. |
| description | We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid-helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature-dependent dynamics. |
| doi_str_mv | 10.1209/0295-5075/106/67006 |
| format | Article |
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| ispartof | Europhysics letters, 2014-06, Vol.106 (6), p.67006, Article 67006 |
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| source | Institute of Physics Journals |
| subjects | 72.20.Ee 72.80.Ng 73.40.Qv Condensed Matter Disordered Systems and Neural Networks Indium oxides Insulators Memory devices Physics Room temperature Temperature dependence Thin films |
| title | Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films |
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