Metalorganic chemical vapor deposition of very thin Pb(Zr,Ti)O3 thin films at low temperatures for high-density ferroelectric memory applications

The metalorganic chemical vapor deposition of very thin (32 mega bit) ferroelectric memory devices. The growth temperatures were set between 450 and 530 °C to obtain a smooth surface morphology and prevent damage to the underlying reaction barrier layer. The average grain size of a 50-nm-thick film...

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Veröffentlicht in:	Journal of materials research 2001-12, Vol.16 (12), p.3583-3591
Hauptverfasser:	Kim, Hye Ryoung, Jeong, Seehwa, Jeon, Chung Bae, Kwon, Oh Seong, Hwang, Cheol Seong, Han, Young Ki, Yang, Doo Young, Oh, Ki Young
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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