Catalyst Temperature Dependence of NH3 Decomposition for InN Grown by Metal Organic Vapor Phase Epitaxy

In this paper, we report an independent catalyst heating system on the Pt-catalyst metal organic vapor phase epitaxy (MOVPE) for Indium nitride (InN) growth, and the dependence of the NH 3 decomposition rate on the Pt catalyst temperature (RT to 1000 °C) using a quadrupole mass spectrometer (Q-MS). When the catalyst temperature is increased above the growth temperature of InN, the NH 3 decomposition rate is enhanced. The grain size of InN becomes larger and the full width at half maximum (FWHM) of the X-ray rocking curve (XRC) was drastically decreased. The increase of N atoms results in the incorporation of nitrogen into the InN layer and thus improves the crystal quality of InN. However, active H increases sharply when the catalyst heater temperature is over about 850 °C. Therefore, a great improvement in the crystal quality of InN film is expected by optimizing the growth condition including a catalyst temperature not exceeding 850 °C.