Compensation of Native Defect Acceptors in Microcrystalline Ge and Si1-xGex Thin Films by Oxygen Incorporation: Electrical Properties and Solar Cell Performance

Undoped hydrogenated microcrystalline Ge (μc-Ge:H) films grown by plasma-enhanced chemical vapor deposition reveal high concentration of free holes (${>}10^{18}$ cm -3 ) when the films exhibit a high crystalline volume fraction. ESR and Hall-effect experiments suggest that the acceptor states ari...

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Veröffentlicht in:	Jpn J Appl Phys 2012-09, Vol.51 (9), p.091302-091302-6
Hauptverfasser:	Matsui, Takuya, Chang, Chia-Wen, Mizuno, Kouichi, Takeuchi, Yoshiaki, Kondo, Michio
Format:	Artikel
Sprache:	eng ; jpn
Online-Zugang:	Volltext
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