Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces

The effects of the Cl 2 -based inductively coupled plasma (ICP) etching of GaN on the interface properties of Al 2 O 3 /GaN structures prepared by atomic layer deposition (ALD) were investigated. We used n-GaN layers grown on freestanding n + -GaN substrates with low dislocation density. The ICP etc...

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Veröffentlicht in:	Jpn J Appl Phys 2012-06, Vol.51 (6), p.060201-060201-3
Hauptverfasser:	Kim, Sungsik, Hori, Yujin, Ma, Wang-Cheng, Kikuta, Daigo, Narita, Tetsuo, Iguchi, Hiroko, Uesugi, Tsutomu, Kachi, Tetsu, Hashizume, Tamotsu
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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