Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor

Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor

Thin vanadium nitride (VN x ) films were grown by atomic layer deposition using tetrakis(diethylamido)vanadium as a precursor and NH 3 as a reactant. A growth rate of 0.1 nm/cycle without incubation time is obtained. Transmission electron microscopy reveals that a nanocrystalline texture in random o...

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Veröffentlicht in:Jpn J Appl Phys 2011-05, Vol.50 (5), p.05EA06-05EA06-2
Hauptverfasser: Takeyama, Mayumi B, Sato, Masaru, Sudoh, Hiroshi, Machida, Hideaki, Ito, Shun, Aoyagi, Eiji, Noya, Atsushi
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container_issue 5
container_start_page 05EA06
container_title Jpn J Appl Phys
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creator Takeyama, Mayumi B
Sato, Masaru
Sudoh, Hiroshi
Machida, Hideaki
Ito, Shun
Aoyagi, Eiji
Noya, Atsushi
description Thin vanadium nitride (VN x ) films were grown by atomic layer deposition using tetrakis(diethylamido)vanadium as a precursor and NH 3 as a reactant. A growth rate of 0.1 nm/cycle without incubation time is obtained. Transmission electron microscopy reveals that a nanocrystalline texture in random orientation is characteristic of the VN x film, which is favorable as an extremely thin barrier application. A low carbon impurity level (${\sim}6$ at.%) is achieved owing to acceleration of the transamination between the V(NR 2 ) 4 precursor and NH 3 . The lowest resistivity of 120 μ$\Omega$ cm is successfully achieved for the VN x film prepared under optimized conditions.
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title Atomic Layer Deposition of Thin VNx Film from Tetrakis(diethylamido)vanadium Precursor
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