Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas

This paper reports the results of a model-based analysis of the etch mechanism for the Y 2 O 3 thin films in the Cl 2 /Ar and BCl 3 /Ar inductively coupled plasma. It was found that the BCl 3 /Ar plasma provides higher etch rate (except the case of pure BCl 3 and Cl 2 gases) as well as shows the non...

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Veröffentlicht in:	Jpn J Appl Phys 2010-08, Vol.49 (8), p.08JB04-08JB04-6
Hauptverfasser:	Kim, Moonkeun, Efremov, Alexander, Hong, MunPyo, Min, Nam Ki, Park, Hyung-Ho, Baek, Kyu-Ha, Kwon, Kwang-Ho
Format:	Artikel
Sprache:	eng ; jpn
Online-Zugang:	Volltext
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