$AlGaN/GaN-on-Silicon Metal--Oxide--Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm2 Using a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process$

AlGaN/GaN-on-Silicon Metal--Oxide--Semiconductor High-Electron-Mobility Transistor with Breakdown Voltage of 800 V and On-State Resistance of 3 m$\Omega$$\cdot$cm2 Using a Complementary Metal--Oxide--Semiconductor Compatible Gold-Free Process

This letter reports the fabrication and characterization of undoped AlGaN/GaN-on-silicon metal--oxide--semiconductor high-electron-mobility transistors (MOS-HEMTs) using a complementary metal--oxide--semiconductor (CMOS) compatible gold-free process. Devices with a gate-to-drain $L_{\text{GD}}$ spac...

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Veröffentlicht in:	Applied physics express 2012-06, Vol.5 (6), p.066501-066501-3
Hauptverfasser:	Liu, Xinke, Zhan, Chunlei, Chan, Kwok Wai, Liu, Wei, Tan, Leng Seow, Chen, Kevin Jing, Yeo, Yee-Chia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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