Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films

Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films

In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25-275 K. In addition, the films exhibited a mark...

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Veröffentlicht in:Japanese Journal of Applied Physics 2018-06, Vol.57 (6)
Hauptverfasser: Oogane, Mikihiko, McFadden, Anthony P., Kota, Yohei, Brown-Heft, Tobias L., Tsunoda, Masakiyo, Ando, Yasuo, Palmstrøm, Chris J.
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container_issue 6
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container_title Japanese Journal of Applied Physics
container_volume 57
creator Oogane, Mikihiko
McFadden, Anthony P.
Kota, Yohei
Brown-Heft, Tobias L.
Tsunoda, Masakiyo
Ando, Yasuo
Palmstrøm, Chris J.
description In this study, we systematically investigated the anisotropic magnetoresistance (AMR) effect in half-metallic Co2MnSi Heusler alloy films epitaxially grown by molecular beam epitaxy. The fourfold symmetric AMR was observed in the temperature range of 25-275 K. In addition, the films exhibited a marked change in twofold symmetric AMR below 100 K. This specific temperature dependence of the AMR effect in Co2MnSi films can be caused by the tetragonal crystal field because of the distortion of the lattice at low temperatures. The influence of tetragonal distortion on both the AMR effect and half-metallicity is also discussed by first-principles calculations.
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title Fourfold symmetric anisotropic magnetoresistance in half-metallic Co2MnSi Heusler alloy thin films
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