Evaluation of carrier concentration reduction in GaN-on-GaN wafers by Raman spectroscopy and Kelvin force microscopy

The carrier concentration in a gallium nitride (GaN) substrate of a GaN-on-GaN wafer grown by hydride vapor phase epitaxy (HVPE) was evaluated by Raman spectroscopy and Kelvin probe force microscopy (KFM). On the basis of the longitudinal optical phonon-plasmon coupled (LOPC) mode of Raman spectra a...

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