Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2017-07, Vol.56 (7)
Hauptverfasser:	Hayasaka, Takeshi, Yoshida, Shinya, Tanaka, Shuji
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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