Evaluation of energy band offset of Si1−xSnx semiconductors by numerical calculation using density functional theory

We examined the numerical calculation for evaluating the energy band offset of Si1−xSnx semiconductors and compared our calculation results with the results of previous theoretical calculation and experimental estimation. By estimating the charge neutrality level of Si1−xSnx as a mutual basis level...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2017-04, Vol.56 (4S)
Hauptverfasser:	Nagae, Yuki, Kurosawa, Masashi, Araidai, Masaaki, Nakatsuka, Osamu, Shiraishi, Kenji, Zaima, Shigeaki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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