Dependence of electron mobility on gate voltage sweeping width and deposition temperature in MOSFETs with HfO2/Al2O3/InGaAs gate stacks

In this study, we fabricated MOSFETs with Al2O3/InGaAs or HfO2/Al2O3/InGaAs gate stacks. The surface was subjected to nitrogen plasma and trimethylaluminum cleaning prior to low-temperature atomic layer deposition. Electron mobility was extracted using the capacitance-gate voltage (C-VG) and drain c...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2017-04, Vol.56 (4S)
Hauptverfasser:	Ohsawa, Kazuto, Netsu, Seiko, Kise, Nobukazu, Noguchi, Shinji, Miyamoto, Yasuyuki
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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