Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction
The crystalline microstructure of AlN films epitaxially grown on trench-patterned templates of AlN/α-Al2O3 and α-Al2O3 was studied by position-dependent X-ray microdiffraction measurements of AlN and 0004 Bragg reflections. The crystalline microstructure of the AlN films is highly anisotropic and pe...
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Veröffentlicht in: | Japanese Journal of Applied Physics 2017-02, Vol.56 (2), p.25502-025502 |
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container_title | Japanese Journal of Applied Physics |
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creator | Khan, Dinh Thanh Takeuchi, Shotaro Nakamura, Yoshiaki Nakamura, Kunihiko Arauchi, Takuji Miyake, Hideto Hiramatsu, Kazumasa Imai, Yasuhiko Kimura, Shigeru Sakai, Akira |
description | The crystalline microstructure of AlN films epitaxially grown on trench-patterned templates of AlN/α-Al2O3 and α-Al2O3 was studied by position-dependent X-ray microdiffraction measurements of AlN and 0004 Bragg reflections. The crystalline microstructure of the AlN films is highly anisotropic and periodic corresponding to the periodicity in the trench pattern of templates. The lattice tilting fluctuation in the AlN film grown on the trench-patterned α-Al2O3 template is about one-half order of magnitude larger than that in the AlN film grown on the trench-patterned AlN/α-Al2O3 template. This is likely to be related to the significant misorientation initiated at the growth of AlN crystal domains from the sidewalls of the α-Al2O3 template without AlN buffer layers and the difference in contact areas at the AlN film/α-Al2O3 interface between the two samples. These findings suggest that trench-patterned templates of AlN/α-Al2O3 are suitable for growing thick high-quality AlN films. |
doi_str_mv | 10.7567/JJAP.56.025502 |
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The crystalline microstructure of the AlN films is highly anisotropic and periodic corresponding to the periodicity in the trench pattern of templates. The lattice tilting fluctuation in the AlN film grown on the trench-patterned α-Al2O3 template is about one-half order of magnitude larger than that in the AlN film grown on the trench-patterned AlN/α-Al2O3 template. This is likely to be related to the significant misorientation initiated at the growth of AlN crystal domains from the sidewalls of the α-Al2O3 template without AlN buffer layers and the difference in contact areas at the AlN film/α-Al2O3 interface between the two samples. These findings suggest that trench-patterned templates of AlN/α-Al2O3 are suitable for growing thick high-quality AlN films.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.56.025502</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Contact ; Crystal structure ; Crystals ; Epitaxial growth ; Fluctuation ; Microstructure ; Reflection ; X rays</subject><ispartof>Japanese Journal of Applied Physics, 2017-02, Vol.56 (2), p.25502-025502</ispartof><rights>2017 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c276t-e1c86ec0d4b94c1a53248bfa778ce0c90c7d93884c5b4d5cda18cd422f1d7c583</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.56.025502/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Khan, Dinh Thanh</creatorcontrib><creatorcontrib>Takeuchi, Shotaro</creatorcontrib><creatorcontrib>Nakamura, Yoshiaki</creatorcontrib><creatorcontrib>Nakamura, Kunihiko</creatorcontrib><creatorcontrib>Arauchi, Takuji</creatorcontrib><creatorcontrib>Miyake, Hideto</creatorcontrib><creatorcontrib>Hiramatsu, Kazumasa</creatorcontrib><creatorcontrib>Imai, Yasuhiko</creatorcontrib><creatorcontrib>Kimura, Shigeru</creatorcontrib><creatorcontrib>Sakai, Akira</creatorcontrib><title>Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The crystalline microstructure of AlN films epitaxially grown on trench-patterned templates of AlN/α-Al2O3 and α-Al2O3 was studied by position-dependent X-ray microdiffraction measurements of AlN and 0004 Bragg reflections. The crystalline microstructure of the AlN films is highly anisotropic and periodic corresponding to the periodicity in the trench pattern of templates. The lattice tilting fluctuation in the AlN film grown on the trench-patterned α-Al2O3 template is about one-half order of magnitude larger than that in the AlN film grown on the trench-patterned AlN/α-Al2O3 template. This is likely to be related to the significant misorientation initiated at the growth of AlN crystal domains from the sidewalls of the α-Al2O3 template without AlN buffer layers and the difference in contact areas at the AlN film/α-Al2O3 interface between the two samples. These findings suggest that trench-patterned templates of AlN/α-Al2O3 are suitable for growing thick high-quality AlN films.</description><subject>Contact</subject><subject>Crystal structure</subject><subject>Crystals</subject><subject>Epitaxial growth</subject><subject>Fluctuation</subject><subject>Microstructure</subject><subject>Reflection</subject><subject>X rays</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2017</creationdate><recordtype>article</recordtype><recordid>eNp1kE-L1TAUxYso-Bzdus5yEPpM0qRpl4_Bf8OgggruQt7NDZNHmtYkBfsx_Ma2dtzp5l4u_M65nFNVLxk9Ktmq17e3p89H2R4pl5LyR9WBNULVgrbycXWglLNa9Jw_rZ7lfFnPVgp2qH59KbNdyBhJuUfiowszRkAyOmK9c5gwFlLWCff1ZErBFNGSgsMUTMH8VwhpycWE4COSwUMac0kzlDn9cTqFjwQnX8xPbwJxPgyZnBfyvU5m2fHtVzJQ_BifV0-cCRlfPOyr6tvbN19v3td3n959uDnd1cBVW2pk0LUI1IpzL4AZ2XDRnZ1RqgOk0FNQtm-6ToA8CyvBGtaBFZw7ZhXIrrmqrnffKY0_ZsxFDz4DhmAijnPWrOubniqmmhU97ugWLCd0ekp-MGnRjOqte711r2Wr9-5Xwatd4MdJX8Y5xTXJ_-Hrf8CXi5k2iD9gerKu-Q3HqJXE</recordid><startdate>20170201</startdate><enddate>20170201</enddate><creator>Khan, Dinh Thanh</creator><creator>Takeuchi, Shotaro</creator><creator>Nakamura, Yoshiaki</creator><creator>Nakamura, Kunihiko</creator><creator>Arauchi, Takuji</creator><creator>Miyake, Hideto</creator><creator>Hiramatsu, Kazumasa</creator><creator>Imai, Yasuhiko</creator><creator>Kimura, Shigeru</creator><creator>Sakai, Akira</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QF</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20170201</creationdate><title>Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction</title><author>Khan, Dinh Thanh ; Takeuchi, Shotaro ; Nakamura, Yoshiaki ; Nakamura, Kunihiko ; Arauchi, Takuji ; Miyake, Hideto ; Hiramatsu, Kazumasa ; Imai, Yasuhiko ; Kimura, Shigeru ; Sakai, Akira</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c276t-e1c86ec0d4b94c1a53248bfa778ce0c90c7d93884c5b4d5cda18cd422f1d7c583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Contact</topic><topic>Crystal structure</topic><topic>Crystals</topic><topic>Epitaxial growth</topic><topic>Fluctuation</topic><topic>Microstructure</topic><topic>Reflection</topic><topic>X rays</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Khan, Dinh Thanh</creatorcontrib><creatorcontrib>Takeuchi, Shotaro</creatorcontrib><creatorcontrib>Nakamura, Yoshiaki</creatorcontrib><creatorcontrib>Nakamura, Kunihiko</creatorcontrib><creatorcontrib>Arauchi, Takuji</creatorcontrib><creatorcontrib>Miyake, Hideto</creatorcontrib><creatorcontrib>Hiramatsu, Kazumasa</creatorcontrib><creatorcontrib>Imai, Yasuhiko</creatorcontrib><creatorcontrib>Kimura, Shigeru</creatorcontrib><creatorcontrib>Sakai, Akira</creatorcontrib><collection>CrossRef</collection><collection>Aluminium Industry Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Khan, Dinh Thanh</au><au>Takeuchi, Shotaro</au><au>Nakamura, Yoshiaki</au><au>Nakamura, Kunihiko</au><au>Arauchi, Takuji</au><au>Miyake, Hideto</au><au>Hiramatsu, Kazumasa</au><au>Imai, Yasuhiko</au><au>Kimura, Shigeru</au><au>Sakai, Akira</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2017-02-01</date><risdate>2017</risdate><volume>56</volume><issue>2</issue><spage>25502</spage><epage>025502</epage><pages>25502-025502</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The crystalline microstructure of AlN films epitaxially grown on trench-patterned templates of AlN/α-Al2O3 and α-Al2O3 was studied by position-dependent X-ray microdiffraction measurements of AlN and 0004 Bragg reflections. The crystalline microstructure of the AlN films is highly anisotropic and periodic corresponding to the periodicity in the trench pattern of templates. The lattice tilting fluctuation in the AlN film grown on the trench-patterned α-Al2O3 template is about one-half order of magnitude larger than that in the AlN film grown on the trench-patterned AlN/α-Al2O3 template. This is likely to be related to the significant misorientation initiated at the growth of AlN crystal domains from the sidewalls of the α-Al2O3 template without AlN buffer layers and the difference in contact areas at the AlN film/α-Al2O3 interface between the two samples. These findings suggest that trench-patterned templates of AlN/α-Al2O3 are suitable for growing thick high-quality AlN films.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.56.025502</doi><tpages>5</tpages></addata></record> |
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subjects | Contact Crystal structure Crystals Epitaxial growth Fluctuation Microstructure Reflection X rays |
title | Study on the influence of different trench-patterned templates on the crystalline microstructure of AlN epitaxial films by X-ray microdiffraction |
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