Origin of recombination activity at small angle grain boundaries in multicrystalline silicon using multi-seed casting growth method

The effect of misorientation on the recombination activity of tilt small angle grain boundaries was studied by temperature-dependent electron beam induced current (EBIC) analyses of artificially induced grain boundaries in multicrystal grown by casting from multiple seeds. For small misorientation,...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-08, Vol.54 (8S1), p.8
Hauptverfasser:	Kojima, Takuto, Tachibana, Tomihisa, Ohshita, Yoshio, Prakash, Ronit R., Sekiguchi, Takashi, Yamaguchi, Masafumi
Format:	Artikel
Sprache:	eng
Schlagworte:	Contamination Gettering Grain boundaries Ingot casting Misorientation Origins Silicon Tilt
Online-Zugang:	Volltext
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