Theoretical analysis of short-circuit capability of SiC power MOSFETs

The short-circuit capability of Si power devices, defined in terms of critical energy density, is the product of the heat capacity in the heat generation region and the increase in temperature. However, for SiC power devices, the heat generation region is significantly smaller than that for Si power...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2015-04, Vol.54 (4S), p.4-1-04DP03-4
Hauptverfasser:	Shoji, Tomoyuki, Soeno, Akitaka, Toguchi, Hiroaki, Aoi, Sachiko, Watanabe, Yukihiko, Tadano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Ambient temperature Devices Drift Heat generation Mathematical analysis MOSFETs Silicon Silicon carbide
Online-Zugang:	Volltext
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