Theoretical analysis of short-circuit capability of SiC power MOSFETs
The short-circuit capability of Si power devices, defined in terms of critical energy density, is the product of the heat capacity in the heat generation region and the increase in temperature. However, for SiC power devices, the heat generation region is significantly smaller than that for Si power...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2015-04, Vol.54 (4S), p.4-1-04DP03-4 |
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| container_end_page | 1-04DP03-4 |
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| container_issue | 4S |
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| container_title | Japanese Journal of Applied Physics |
| container_volume | 54 |
| creator | Shoji, Tomoyuki Soeno, Akitaka Toguchi, Hiroaki Aoi, Sachiko Watanabe, Yukihiko Tadano, Hiroshi |
| description | The short-circuit capability of Si power devices, defined in terms of critical energy density, is the product of the heat capacity in the heat generation region and the increase in temperature. However, for SiC power devices, the heat generation region is significantly smaller than that for Si power devices, because the drift-region thickness is about 10 times less in SiC power devices. Therefore, the formulae used for Si devices are not directly applicable to SiC devices. In this study, analytical formulae are derived for the short-circuit capability of a SiC power device and its dependence on the ambient temperature and the thickness of the n− drift region, on the basis of the thermal diffusion equation. The calculated results are found to be in good agreement with those of direct measurements. |
| doi_str_mv | 10.7567/JJAP.54.04DP03 |
| format | Article |
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However, for SiC power devices, the heat generation region is significantly smaller than that for Si power devices, because the drift-region thickness is about 10 times less in SiC power devices. Therefore, the formulae used for Si devices are not directly applicable to SiC devices. In this study, analytical formulae are derived for the short-circuit capability of a SiC power device and its dependence on the ambient temperature and the thickness of the n− drift region, on the basis of the thermal diffusion equation. The calculated results are found to be in good agreement with those of direct measurements.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.54.04DP03</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Ambient temperature ; Devices ; Drift ; Heat generation ; Mathematical analysis ; MOSFETs ; Silicon ; Silicon carbide</subject><ispartof>Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DP03-4</ispartof><rights>2015 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c407t-56cd62b3ea2ac94c4620c5170b483ff82abac44d7ddc2b697cdcc4d9a917e3103</citedby><cites>FETCH-LOGICAL-c407t-56cd62b3ea2ac94c4620c5170b483ff82abac44d7ddc2b697cdcc4d9a917e3103</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.54.04DP03/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,53846,53893</link.rule.ids></links><search><creatorcontrib>Shoji, Tomoyuki</creatorcontrib><creatorcontrib>Soeno, Akitaka</creatorcontrib><creatorcontrib>Toguchi, Hiroaki</creatorcontrib><creatorcontrib>Aoi, Sachiko</creatorcontrib><creatorcontrib>Watanabe, Yukihiko</creatorcontrib><creatorcontrib>Tadano, Hiroshi</creatorcontrib><title>Theoretical analysis of short-circuit capability of SiC power MOSFETs</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The short-circuit capability of Si power devices, defined in terms of critical energy density, is the product of the heat capacity in the heat generation region and the increase in temperature. However, for SiC power devices, the heat generation region is significantly smaller than that for Si power devices, because the drift-region thickness is about 10 times less in SiC power devices. Therefore, the formulae used for Si devices are not directly applicable to SiC devices. In this study, analytical formulae are derived for the short-circuit capability of a SiC power device and its dependence on the ambient temperature and the thickness of the n− drift region, on the basis of the thermal diffusion equation. The calculated results are found to be in good agreement with those of direct measurements.</description><subject>Ambient temperature</subject><subject>Devices</subject><subject>Drift</subject><subject>Heat generation</subject><subject>Mathematical analysis</subject><subject>MOSFETs</subject><subject>Silicon</subject><subject>Silicon carbide</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp1kN9LwzAQx4MoOKevPvdRhdYkTZP2ccz5Y0w22HwO6TVlKd1SkxbZf29L96hPx919vgf3Qeie4EgkXDwvl7NNlLAIs5cNji_QhMRMhAzz5BJNMKYkZBml1-jG-6pvecLIBC12e22dbg2oOlBHVZ-88YEtA7-3rg3BOOhMG4BqVG5q056G3dbMg8b-aBd8rrevi52_RVelqr2-O9cp-urH8_dwtX77mM9WITAs2jDhUHCax1pRBRkDximGhAicszQuy5SqXAFjhSgKoDnPBBQArMhURoSOCY6n6GG82zj73WnfyoPxoOtaHbXtvCQ8TYRI-896NBpRcNZ7p0vZOHNQ7iQJloMvOfiSCZOjrz7wOAaMbWRlO9fL8LKqVDNAbHvmZFOUPfv0B_vP4V9RdHkl</recordid><startdate>20150401</startdate><enddate>20150401</enddate><creator>Shoji, Tomoyuki</creator><creator>Soeno, Akitaka</creator><creator>Toguchi, Hiroaki</creator><creator>Aoi, Sachiko</creator><creator>Watanabe, Yukihiko</creator><creator>Tadano, Hiroshi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20150401</creationdate><title>Theoretical analysis of short-circuit capability of SiC power MOSFETs</title><author>Shoji, Tomoyuki ; Soeno, Akitaka ; Toguchi, Hiroaki ; Aoi, Sachiko ; Watanabe, Yukihiko ; Tadano, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c407t-56cd62b3ea2ac94c4620c5170b483ff82abac44d7ddc2b697cdcc4d9a917e3103</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Ambient temperature</topic><topic>Devices</topic><topic>Drift</topic><topic>Heat generation</topic><topic>Mathematical analysis</topic><topic>MOSFETs</topic><topic>Silicon</topic><topic>Silicon carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shoji, Tomoyuki</creatorcontrib><creatorcontrib>Soeno, Akitaka</creatorcontrib><creatorcontrib>Toguchi, Hiroaki</creatorcontrib><creatorcontrib>Aoi, Sachiko</creatorcontrib><creatorcontrib>Watanabe, Yukihiko</creatorcontrib><creatorcontrib>Tadano, Hiroshi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shoji, Tomoyuki</au><au>Soeno, Akitaka</au><au>Toguchi, Hiroaki</au><au>Aoi, Sachiko</au><au>Watanabe, Yukihiko</au><au>Tadano, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Theoretical analysis of short-circuit capability of SiC power MOSFETs</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2015-04-01</date><risdate>2015</risdate><volume>54</volume><issue>4S</issue><spage>4</spage><epage>1-04DP03-4</epage><pages>4-1-04DP03-4</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The short-circuit capability of Si power devices, defined in terms of critical energy density, is the product of the heat capacity in the heat generation region and the increase in temperature. However, for SiC power devices, the heat generation region is significantly smaller than that for Si power devices, because the drift-region thickness is about 10 times less in SiC power devices. Therefore, the formulae used for Si devices are not directly applicable to SiC devices. In this study, analytical formulae are derived for the short-circuit capability of a SiC power device and its dependence on the ambient temperature and the thickness of the n− drift region, on the basis of the thermal diffusion equation. The calculated results are found to be in good agreement with those of direct measurements.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.54.04DP03</doi></addata></record> |
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| issn | 0021-4922 1347-4065 |
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| source | IOP Publishing Journals; Institute of Physics (IOP) Journals - HEAL-Link |
| subjects | Ambient temperature Devices Drift Heat generation Mathematical analysis MOSFETs Silicon Silicon carbide |
| title | Theoretical analysis of short-circuit capability of SiC power MOSFETs |
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