Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"

Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"

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Veröffentlicht in:Japanese Journal of Applied Physics 2014-07, Vol.53 (8), p.89201
Hauptverfasser: Yamauchi, Yoshimitsu, Kamakura, Yoshinari, Isagi, Yousuke, Matsuoka, Toshimasa, Malotaux, Satoshi
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container_end_page
container_issue 8
container_start_page 89201
container_title Japanese Journal of Applied Physics
container_volume 53
creator Yamauchi, Yoshimitsu
Kamakura, Yoshinari
Isagi, Yousuke
Matsuoka, Toshimasa
Malotaux, Satoshi
description
doi_str_mv 10.7567/JJAP.53.089201
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fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_7567_JJAP_53_089201</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>RP130171E2</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3281-68b65e9c5ea4e6911c05bbdab60bb620694cbdb5840b6f99a8fa275d4266d21b3</originalsourceid><addsrcrecordid>eNp1kE1Lw0AYhBdRsFavnpeeRNi6u8luEm-ltLWl2kLtxUvYr0hCkg2bxJof4X82pT3qaXjhmZmXAeCe4HHAePC0Wk22Y-aNcRhRTC7AgHh-gHzM2SUYYEwJ8iNKr8FNXWf9yZlPBuBn5pxo2uIZjnZNqztoE_hmv0wO57kVTVp-ooVoDNx8p9rAnSlSZUvdqsY6-GoK6zq4r3sKLkudtkUP5_lRP9JSnU1Jj67tAW3twTi46-rGFMiWaCvKvmZSVXmq-iZb1qNbcJWIvDZ3Zx2C_Xz2Pn1B681iOZ2skfJoSBAPJWcmUswI3_CIEIWZlFpIjqXkFPPIV1JLFvpY8iSKRJgIGjDtU841JdIbgvEpVzlb184kceXSQrguJjg-jhkfx4yZF5_G7A2PJ0NqqzizrSv79_6HH_6As0xURyg8Y3GlE-8X0PeD6A</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"</title><source>IOP Publishing Journals</source><source>Institute of Physics (IOP) Journals - HEAL-Link</source><creator>Yamauchi, Yoshimitsu ; Kamakura, Yoshinari ; Isagi, Yousuke ; Matsuoka, Toshimasa ; Malotaux, Satoshi</creator><creatorcontrib>Yamauchi, Yoshimitsu ; Kamakura, Yoshinari ; Isagi, Yousuke ; Matsuoka, Toshimasa ; Malotaux, Satoshi</creatorcontrib><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.089201</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><ispartof>Japanese Journal of Applied Physics, 2014-07, Vol.53 (8), p.89201</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3281-68b65e9c5ea4e6911c05bbdab60bb620694cbdb5840b6f99a8fa275d4266d21b3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.089201/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27903,27904,53825,53872</link.rule.ids></links><search><creatorcontrib>Yamauchi, Yoshimitsu</creatorcontrib><creatorcontrib>Kamakura, Yoshinari</creatorcontrib><creatorcontrib>Isagi, Yousuke</creatorcontrib><creatorcontrib>Matsuoka, Toshimasa</creatorcontrib><creatorcontrib>Malotaux, Satoshi</creatorcontrib><title>Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kE1Lw0AYhBdRsFavnpeeRNi6u8luEm-ltLWl2kLtxUvYr0hCkg2bxJof4X82pT3qaXjhmZmXAeCe4HHAePC0Wk22Y-aNcRhRTC7AgHh-gHzM2SUYYEwJ8iNKr8FNXWf9yZlPBuBn5pxo2uIZjnZNqztoE_hmv0wO57kVTVp-ooVoDNx8p9rAnSlSZUvdqsY6-GoK6zq4r3sKLkudtkUP5_lRP9JSnU1Jj67tAW3twTi46-rGFMiWaCvKvmZSVXmq-iZb1qNbcJWIvDZ3Zx2C_Xz2Pn1B681iOZ2skfJoSBAPJWcmUswI3_CIEIWZlFpIjqXkFPPIV1JLFvpY8iSKRJgIGjDtU841JdIbgvEpVzlb184kceXSQrguJjg-jhkfx4yZF5_G7A2PJ0NqqzizrSv79_6HH_6As0xURyg8Y3GlE-8X0PeD6A</recordid><startdate>20140718</startdate><enddate>20140718</enddate><creator>Yamauchi, Yoshimitsu</creator><creator>Kamakura, Yoshinari</creator><creator>Isagi, Yousuke</creator><creator>Matsuoka, Toshimasa</creator><creator>Malotaux, Satoshi</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20140718</creationdate><title>Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"</title><author>Yamauchi, Yoshimitsu ; Kamakura, Yoshinari ; Isagi, Yousuke ; Matsuoka, Toshimasa ; Malotaux, Satoshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3281-68b65e9c5ea4e6911c05bbdab60bb620694cbdb5840b6f99a8fa275d4266d21b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yamauchi, Yoshimitsu</creatorcontrib><creatorcontrib>Kamakura, Yoshinari</creatorcontrib><creatorcontrib>Isagi, Yousuke</creatorcontrib><creatorcontrib>Matsuoka, Toshimasa</creatorcontrib><creatorcontrib>Malotaux, Satoshi</creatorcontrib><collection>CrossRef</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yamauchi, Yoshimitsu</au><au>Kamakura, Yoshinari</au><au>Isagi, Yousuke</au><au>Matsuoka, Toshimasa</au><au>Malotaux, Satoshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-07-18</date><risdate>2014</risdate><volume>53</volume><issue>8</issue><spage>89201</spage><pages>89201-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.089201</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
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title Erratum: "Study of Novel Floating-Gate Oxide Semiconductor Memory Using Indium-Gallium-Zinc Oxide for Low-Power System-on-Panel Applications"
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T06%3A13%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Erratum:%20%22Study%20of%20Novel%20Floating-Gate%20Oxide%20Semiconductor%20Memory%20Using%20Indium-Gallium-Zinc%20Oxide%20for%20Low-Power%20System-on-Panel%20Applications%22&rft.jtitle=Japanese%20Journal%20of%20Applied%20Physics&rft.au=Yamauchi,%20Yoshimitsu&rft.date=2014-07-18&rft.volume=53&rft.issue=8&rft.spage=89201&rft.pages=89201-&rft.issn=0021-4922&rft.eissn=1347-4065&rft.coden=JJAPB6&rft_id=info:doi/10.7567/JJAP.53.089201&rft_dat=%3Ciop_cross%3ERP130171E2%3C/iop_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true