Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction
The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully inv...
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| Veröffentlicht in: | Japanese Journal of Applied Physics 2014-06, Vol.53 (6), p.64302-1-064302-5 |
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| container_end_page | 1-064302-5 |
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| container_issue | 6 |
| container_start_page | 64302 |
| container_title | Japanese Journal of Applied Physics |
| container_volume | 53 |
| creator | Lu, Ting-Chou Chen, Wei-Tsung Zan, Hsiao-Wen Ker, Ming-Dou |
| description | The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders. |
| doi_str_mv | 10.7567/JJAP.53.064302 |
| format | Article |
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The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/JJAP.53.064302</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>The Japan Society of Applied Physics</publisher><subject>Capping ; Channels ; Computer aided design ; Computer simulation ; Depletion ; Leakage current ; Semiconductor devices ; Thin film transistors ; Transistors</subject><ispartof>Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.64302-1-064302-5</ispartof><rights>2014 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c340t-f738cd244700e3138647b9cb1a7793d5d8f995d72a43a9730203609eefe220c43</citedby><cites>FETCH-LOGICAL-c340t-f738cd244700e3138647b9cb1a7793d5d8f995d72a43a9730203609eefe220c43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/JJAP.53.064302/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,53821,53868</link.rule.ids></links><search><creatorcontrib>Lu, Ting-Chou</creatorcontrib><creatorcontrib>Chen, Wei-Tsung</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Ker, Ming-Dou</creatorcontrib><title>Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders.</description><subject>Capping</subject><subject>Channels</subject><subject>Computer aided design</subject><subject>Computer simulation</subject><subject>Depletion</subject><subject>Leakage current</subject><subject>Semiconductor devices</subject><subject>Thin film transistors</subject><subject>Transistors</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp1kU1v1DAQhiMEEkvhytnHCimLEztxcqwqPlpVggOcLa89znpxbGM7lOUH9nfVIT3C6fWMnvnwvFX1tsF71vXs_e3t1dd9R_a4pwS3z6pdQyirKe6759UO47ap6di2L6tXKZ1K2He02VUPN-4XpGwmkY2bEFiQOXqHFAQL2ZQXaF1yyDgkZh_D0S-pBMoscz0Ja1f9Y5ys_W-jAOWjcbU2dkY5CpdMyj6ie5OPSCBt_TZFihBWnSELiw5nlEEenbd-OiPp57BkiLUo7VTZI5nJoWTmxYq_-winkAXxQ0yAIqhFrtnX1QstbII3T3pRff_44dv15_ruy6eb66u7WhKKc60ZGaRqKWUYA2nI0FN2GOWhEYyNRHVq0OPYKdYKSsTIyhkx6fEIoKFtsaTkorrc-obofy7lcHw2SYK1wkE5DG_6oWOMDnRF9xsqo08pguYhmlnEM28wXw3jq2G8I3wzrBS82wqMD_zkl-jKT_4PX_4DPp1EWKH-CeNBafIIGwGpJA</recordid><startdate>20140601</startdate><enddate>20140601</enddate><creator>Lu, Ting-Chou</creator><creator>Chen, Wei-Tsung</creator><creator>Zan, Hsiao-Wen</creator><creator>Ker, Ming-Dou</creator><general>The Japan Society of Applied Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>20140601</creationdate><title>Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction</title><author>Lu, Ting-Chou ; Chen, Wei-Tsung ; Zan, Hsiao-Wen ; Ker, Ming-Dou</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c340t-f738cd244700e3138647b9cb1a7793d5d8f995d72a43a9730203609eefe220c43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Capping</topic><topic>Channels</topic><topic>Computer aided design</topic><topic>Computer simulation</topic><topic>Depletion</topic><topic>Leakage current</topic><topic>Semiconductor devices</topic><topic>Thin film transistors</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Lu, Ting-Chou</creatorcontrib><creatorcontrib>Chen, Wei-Tsung</creatorcontrib><creatorcontrib>Zan, Hsiao-Wen</creatorcontrib><creatorcontrib>Ker, Ming-Dou</creatorcontrib><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Lu, Ting-Chou</au><au>Chen, Wei-Tsung</au><au>Zan, Hsiao-Wen</au><au>Ker, Ming-Dou</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2014-06-01</date><risdate>2014</risdate><volume>53</volume><issue>6</issue><spage>64302</spage><epage>1-064302-5</epage><pages>64302-1-064302-5</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>The electron distribution in an amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) with a floating metal-semiconductor (MS) back interface is analyzed using a technology computer-aided design (TCAD) model. The channel geometry (i.e., length and thickness) effect is carefully investigated. At a high work function (i.e., 5 eV) of the capping metal, electrons inside a-IGZO are mostly removed by the capping metal (electron depletion effect). The depletion of the IGZO film leads to an increase in threshold voltage in a-IGZO TFT. TCAD simulation reveals that increasing channel length and decreasing IGZO thickness significantly enhance such an electron depletion effect. Finally, the electron depletion effect is applied to a-IGZO TFT with a high-conductivity IGZO film to greatly suppress the leakage current by over 5 orders.</abstract><pub>The Japan Society of Applied Physics</pub><doi>10.7567/JJAP.53.064302</doi><tpages>5</tpages></addata></record> |
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| identifier | ISSN: 0021-4922 |
| ispartof | Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.64302-1-064302-5 |
| issn | 0021-4922 1347-4065 |
| language | eng |
| recordid | cdi_iop_journals_10_7567_JJAP_53_064302 |
| source | Institute of Physics Journals |
| subjects | Capping Channels Computer aided design Computer simulation Depletion Leakage current Semiconductor devices Thin film transistors Transistors |
| title | Investigating electron depletion effect in amorphous indium-gallium-zinc-oxide thin-film transistor with a floating capping metal by technology computer-aided design simulation and leakage reduction |
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