Ohmic contact to nonpolar a-plane p-type GaN using Ni/Au

In this study, we examined the characteristics of Ni/Au (20 nm/80 nm) ohmic contacts to non-polar a-plane p-GaN as a function of annealing temperature. The current-voltage (I-V) curves were showed an upward curve with annealing when Ni/Au metals were used as ohmic metals to nonpolar p-GaN, which was...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2014-05, Vol.53 (5S3), p.5-1-05HA04-4
Hauptverfasser:	Kim, Jae-Kwan, Lee, Dong-min, Lee, Sung-Nam, Song, Keun-Man, Yoon, Jae-Sik, Lee, Ji-Myon
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Contact Contact resistance Gallium Gallium nitrides Gold Nickel Secondary ion mass spectroscopy Vacancies
Online-Zugang:	Volltext
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