Growth of InGaN/GaN multiple quantum wells on size-controllable nanopyramid arrays

Regularly distributed nanopyramid arrays with a highly uniform size were grown by selective-area growth. The nanopyramid size could be tuned by varying the growth time. Two emission peaks were observed from multiple quantum wells grown on the nanopyramids. The longer-wavelength peak originated from...

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Veröffentlicht in:	Japanese Journal of Applied Physics 2014-03, Vol.53 (3), p.30306-1-030306-4
Hauptverfasser:	Miao, Cao, Honda, Yoshio, Yamaguchi, Masahito, Amano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	Apexes Arrays Diffusion length Gallium nitrides Indium Indium gallium nitrides Nanostructure Pyramids Quantum wells
Online-Zugang:	Volltext
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